BH616UV8010AI BSI [Brilliance Semiconductor], BH616UV8010AI Datasheet - Page 5

• Manufacturer Part Number: BH616UV8010AI
• Description: Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
• Manufacturer: BSI [Brilliance Semiconductor]

R0201-BH616UV8010
n AC ELECTRICAL CHARACTERISTICS (T
n SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE
READ CYCLE 1
PARAMETER
JEDEC
NAME
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
E1LQV
E2LQV
E1LQX
E2LQX
E1HQZ
E2HQZ
GLQV
GLQX
BHQZ
GHQZ
AVAX
AVQX
BLQV
BLQX
AVQX
BSI
ADDRESS
D
OUT
(1,2,4)
PARANETER
NAME
t
t
t
t
t
t
t
t
t
ACS1
ACS2
CHZ1
CHZ2
t
t
t
t
CLZ1
CLZ2
t
t
BDO
OLZ
OHZ
RC
AA
BA
OE
BE
OH
Read Cycle Time
Address Access Time
Chip Select Access Time
Chip Select Access Time
Data Byte Control Access Time
Output Enable to Output Valid
Chip Select to Output Low Z
Chip Select to Output Low Z
Data Byte Control to Output Low Z
Output Enable to Output Low Z
Chip Select to Output High Z
Chip Select to Output High Z
Data Byte Control to Output High Z
Output Enable to Output High Z
Data Hold from Address Change
A
= -25
t
OH
DESCRIPTION
O
C to +85
t
AA
5
O
C)
t
RC
(LB, UB)
(LB, UB)
(LB, UB)
(CE1)
(CE2)
(CE1)
(CE2)
(CE1)
(CE2)
MIN.
70
10
10
10
10
--
--
--
--
--
--
--
--
--
5
CYCLE TIME : 70ns
TYP.
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
BH616UV8010
t
OH
MAX.
70
70
70
70
30
25
25
25
25
--
--
--
--
--
--
UNITS
Revision 1.0
Jul.
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2005