FS8S0765RCB_06 FAIRCHILD [Fairchild Semiconductor], FS8S0765RCB_06 Datasheet - Page 5

• Manufacturer Part Number: FS8S0765RCB_06
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

FS8S0765RCB Rev. 1.0.2
Electrical Characteristics (SenseFET part)
(T
Note:
1.
2.
A
Pulse test: Pulse width ≤ 300μS, duty 2%
MOSFET switching time is essentially independent of operating temperature.
Symbol
R
BV
td (on)
td (off)
= 25°C unless otherwise specified)
Coss
DS(ON)
Crss
I
Ciss
Qgd
Qgs
DSS
gfs
Qg
tr
tf
DSS
Drain Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
Parameter
(1)
5
V
V
V
V
V
V
V
f = 1MHz
V
V
V
GS
DS
DS
GS
GS
DS
GS
DD
GS
DS
=0V, I
=650V, V
=520V
=0V, T
=10V, I
=40V, I
=0V, V
=325V, I
=10V, I
=325V
Condition
D
C
DS
D
(2)
=250μA
D
D
=125°C
=3.5A
=3.5A
D
=6.5A,
GS
=25V,
=6.5A
=0V
(2)
Min.
650
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
1415
100
115
1.4
15
25
60
65
40
12
8
7
-
-
-
Max.
200
300
1.6
-
-
-
-
-
-
-
-
-
-
-
-
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Unit
mho
μA
μA
nS
nC
pF
W
V