MT28F320J3FS-12 MICRON [Micron Technology], MT28F320J3FS-12 Datasheet - Page 42
![no-image](/images/no-image-200.jpg)
MT28F320J3FS-12
Manufacturer Part Number
MT28F320J3FS-12
Description
Q-FLASHTM MEMORY
Manufacturer
MICRON [Micron Technology]
Datasheet
1.MT28F320J3FS-12.pdf
(52 pages)
- Current page: 42 of 52
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NOTE: AC test inputs are driven at V
128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_7.p65 – Rev. 6, Pub. 8/02
2V (50% of V
CC
Q). Input rise and fall times (10% to 90%) < 5ns.
V
0.0
CC
Transient Input/Output Reference Waveform for
Q
Input V
Transient Equivalent Testing Load Circuit
V
CC
CC
Q for a logic 1 and 0.0V for a logic 0. Input timing begins, and output timing ends, at V
Test Configuration Capacitance Loading Value
NOTE: C
CC
Q/2
V
V
Q = 2.7V–3.6V, or V
CC
CC
Under Test
Q = V
Q = 4.5V to 5.5V
Device
Test Configuration
L
includes jig capacitance
CC
= 2.7V to 3.6V
Figure 12
Figure 13
Test Points
1.3V
42
R
1N914
L
C
= 3.3KΩ
CC
L
Q = 4.5V–5.5V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Out
C
L
30
30
30
(pF)
128Mb, 64Mb, 32Mb
V
CC
Q/2 Output
Q-FLASH MEMORY
©2002, Micron Technology, Inc.
CC
Q/
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