IS41C4100-35T ICSI [Integrated Circuit Solution Inc], IS41C4100-35T Datasheet - Page 6

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IS41C4100-35T

Manufacturer Part Number
IS41C4100-35T
Description
1Mx4 bit Dynamic RAM with EDO Page Mode
Manufacturer
ICSI [Integrated Circuit Solution Inc]
Datasheet
CAPACITANCE
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
RECOMMENDED OPERATING CONDITIONS
IC41C4100
IC41LV4100
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
6
Symbol
C
C
C
Symbol
V
V
I
P
T
T
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
OUT
Symbol
IN
IN
IO
A
STG
T
CC
D
1
2
V
V
V
T
CC
IH
IL
A
Parameters
Voltage on Any Pin Relative to GND
Supply Voltage
Output Current
Power Dissipation
Commercial Operation Temperature
Industrial Operationg Temperature
Storage Temperature
Parameter
Input Capacitance: A0-A9
Input Capacitance: RAS, CAS, WE, OE
Data Input/Output Capacitance: I/O0-I/O3
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Commercial Ambient Temperature
Industrial Ambient Temperature
A
(1,2)
= 25°C, f = 1 MHz.
(1)
3.3V
3.3V
3.3V
3.3V
3.3V
5V
5V
5V
5V
5V
(Voltages are referenced to GND.)
–1.0 to +7.0
–0.5 to +4.6
–1.0 to +7.0
–0.5 to +4.6
–55 to +125
–40 to +85
Min.
–1.0
–0.3
–40
4.5
3.0
2.4
2.0
0 to +70
0
Rating
50
1
Max.
Typ.
5.0
3.3
5
7
7
Unit
mA
°C
°C
°C
W
V
V
V
V
CC
CC
Max.
Integrated Circuit Solution Inc.
5.5
3.6
0.8
0.8
70
85
Unit
+ 1.0
+ 0.3
pF
pF
pF
Unit
°C
°C
V
V
V
DR027-0A 09/05/2001

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