HYB18L512320BF-7.5 QIMONDA [Qimonda AG], HYB18L512320BF-7.5 Datasheet - Page 14

• Manufacturer Part Number: HYB18L512320BF-7.5
• Description: DRAMs for Mobile Applications 512-Mbit SDR Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

1) 0 ⎦C ≤
2)
3.2
Rev.1.22, 2007-08
03292006-D7GM-ZBSS
Parameter
Power Supply Voltage
Power Supply Voltage for DQ Output Buffer
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Output leakage current
Parameter
Clock cycle time
Clock frequency
Access time from CLK
Clock high-level width
Clock low-level width
Address, data and command input setup time
Address, data and command input hold time
MODE REGISTER SET command period
DQ low-impedance time from CLK
DQ high-impedance time from CLK
Data out hold time
DQM to DQ High-Z delay (READ Commands)
DQM write mask latency
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
V
with amplitude measured between peak voltage and DC reference level.
IH
may overshoot to
T
C
≤ 70 °C (comm.); -25 °C ≤
AC Characteristics
V
DD
+ 0.8 V for pulse width < 4 ns;
T
C
≤ 85 °C (ext.); All voltages referenced to
CL = 2
CL = 2
V
V
V
V
V
V
I
I
CL = 3
CL = 3
IL
OL
DD
DDQ
IH
IL
OH
OL
Symbol
V
IL
may undershoot to -0.8 V for pulse width < 4 ns.Pulse width measured at 50%
14
1.70
1.70
0.8 ×
-0.3
V
–
-1.0
-1.5
t
f
t
t
t
t
t
t
t
t
t
t
t
t
t
DDQ
CK
CK
AC
CH
CL
IS
IH
MRD
LZ
HZ
OH
DQZ
DQW
RC
RCD
Symbol
Min.
V
- 0.2
DDQ
Values
V
9.5
7.5
—
—
—
2.5
2.5
1.5
0.8
2
1.0
3.0
2.5
—
0
67
19
SS
.
1.95
1.95
V
0.3
–
0.2
1.0
1.5
V
Min.
DDQ
SS
and
Max.
+ 0.3
- 7.5
V
SSQ
—
—
105
133
6.5
—
—
—
—
—
—
7.0
—
2
—
—
—
must be at same potential.
Max.
Electrical Characteristics
V
V
V
V
V
V
μΑ
μA
HY[B/E]18L512320BF-7.5
Unit
512-Mbit Mobile-RAM
AC Characteristics
ns
ns
MHz
MHz
ns
ns
ns
ns
ns
t
ns
ns
ns
t
t
ns
ns
CK
CK
CK
Internet Data Sheet
Unit
TABLE 12
TABLE 13
–
–
2)
2)
–
–
–
–
—
—
5)6)
—
—
7)
7)
—
—
—
5)6)
—
—
8)
8)
Notes
Notes
1)2)3)4)
1)