HYB25D256160CC-5 QIMONDA [Qimonda AG], HYB25D256160CC-5 Datasheet - Page 30

no-image

HYB25D256160CC-5

Manufacturer Part Number
HYB25D256160CC-5
Description
256-Mbit Double-Data-Rate SDRAM
Manufacturer
QIMONDA [Qimonda AG]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HYB25D256160CC-5
Manufacturer:
SIEMENS
Quantity:
1
1)
2) Input slew rate ≥1 V/ns
3) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference level for signals
4) Inputs are not recognized as valid until
5) The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (note 3) is
6) For each of the terms, if not already an integer, round to the next highest integer.
7)
8) Fast slew rate ≥ 1.0 V/ns , slow slew rate ≥ 0.5 V/ns and < 1 V/ns for command/address and CK & CK slew rate > 1.0 V/ns, measured
9) These parameters guarantee device timing, but they are not necessarily tested on each device.
10) A maximum of eight Autorefresh commands can be posted to any given DDR SDRAM device.
11) The specific requirement is that DQS be valid (HIGH, LOW, or some point on a valid transition) on or before this CK edge. A valid transition
12) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but system
13) In all circumstances,
Rev. 2.3, 2007-03
03062006-8CCM-VPUW
Parameter
Exit self-refresh to non-read command
Exit self-refresh to read command
V
other than CK/CK, is
t
voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).
between
is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were previously in progress on the
bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW, or transitioning from
HIGH to LOW at this time, depending on
performance (bus turnaround) degrades accordingly.
HZ
DDQ
and
= 2.5 V ± 0.2 V,
t
LZ
V
IH(ac)
transitions occur in the same access time windows as valid data transitions. These parameters are not referred to a specific
and
V
t
V
IL(ac)
V
XSNR
REF
DD
.
. CK/CK slew rate are ≥ 1.0 V/ns.
= +2.5 V ± 0.2 V ; 0 °C ≤
can be satisfied using
V
REF
t
DQSS
stabilizes.
.
t
XSNR
T
A
Symbol
t
t
XSNR
XSRD
≤ 70 °C
=
t
RFC,min
+ 1 ×
30
–7
DDR266A
Min.
75
200
t
CK
t
CK
is equal to the actual system clock cycle time.
HY[B/I]25D256[16/40/80]0C[E/C/F/T](L)
256 Mbit Double-Data-Rate SDRAM
Max.
Unit
ns
t
CK
Internet Data Sheet
Note/Test
Condition
2)3)4)5)13)
2)3)4)5)
V
TT
.
1)

Related parts for HYB25D256160CC-5