M48Z35-70MH1TR STMICROELECTRONICS [STMicroelectronics], M48Z35-70MH1TR Datasheet - Page 7

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M48Z35-70MH1TR

Manufacturer Part Number
M48Z35-70MH1TR
Description
256 Kbit (32 Kbit x 8) ZEROPOWER SRAM
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
Table 5. DC Characteristics
Note: 1. Valid for Ambient Operating Temperature: T
OPERATING MODES
The M48Z35/Y also has its own Power-fail Detect
circuit. The control circuitry constantly monitors
the single 5V supply for an out of tolerance condi-
tion. When V
protects the SRAM, providing a high degree of
Table 6. Operating Modes
Note: X = V
Deselect
WRITE
READ
READ
Deselect
Deselect
Symbol
I
V
I
I
I
V
LO
V
Mode
I
V
LI
CC1
CC2
IL
CC
OH
OL
IH
(2)
2. Outputs deselected.
3. Negative spikes of –1V allowed for up to 10ns once per cycle.
1. See Table 10, page 13 for details.
(2)
(3)
IH
Input Leakage Current
Output Leakage Current
Supply Current
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
or V
CC
IL
; V
is out of tolerance, the circuit write
V
SO
SO
= Battery Back-up Switchover Voltage.
Parameter
4.75 to 5.5V
4.5 to 5.5V
to V
V
V
PFD
or
SO
CC
(1)
(min)
(1)
A
= 0 to 70°C or –40 to 85°C; V
V
V
V
V
E
X
X
IH
IL
IL
IL
Test Condition
0V
0V
E = V
Outputs open
I
I
OL
OH
E = V
V
V
= 2.1mA
CC
= –1mA
OUT
IN
V
V
G
X
X
X
X
– 0.2V
IH
data security in the midst of unpredictable system
operation brought on by low V
low approximately 3V, the control circuitry con-
nects the battery which maintains data until valid
power returns.
IL
IH
V
V
CC
CC
(1)
V
V
V
W
X
X
X
CC
IH
IH
IL
= 4.75 to 5.5V or 4.5 to 5.5V (except where noted).
DQ0-DQ7
–0.3
Min
2.2
2.4
High Z
High Z
High Z
High Z
D
D
OUT
IN
M48Z35, M48Z35Y
Battery Back-up Mode
V
CC
CC
CMOS Standby
Max
0.8
0.4
±1
±5
50
3
3
. As V
+ 0.3
Standby
Power
Active
Active
Active
CC
falls be-
Unit
mA
mA
mA
µA
µA
V
V
V
V
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