M48Z35-70MH1TR STMICROELECTRONICS [STMicroelectronics], M48Z35-70MH1TR Datasheet - Page 13

• Manufacturer Part Number: M48Z35-70MH1TR
• Description: 256 Kbit (32 Kbit x 8) ZEROPOWER SRAM
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Table 10. Power Down/Up Trip Points DC Characteristics
Note: All voltages referenced to V
V
I
switching, can produce voltage fluctuations, re-
sulting in spikes on the V
can be reduced if capacitors are used to store en-
ergy which stabilizes the V
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic by-
pass capacitor value of 0.1µF (see Figure 12) is
recommended in order to provide the needed fil-
tering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on V
below V
spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, ST recommends connecting
a schottky diode from V
nected to V
1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount).
CC
CC
Symbol
t
V
transients, including those produced by output
V
DR
Noise And Negative Going Transients
1. Valid for Ambient Operating Temperature: T
2. At 25°C.
PFD
SO
(2)
SS
by as much as one volt. These negative
CC
Power-fail Deselect Voltage
Battery Back-up Switchover Voltage
Expected Data Retention Time
, anode to V
CC
CC
CC
SS
.
bus. These transients
to V
CC
that drive it to values
SS
Parameter
). (Schottky diode
bus. The energy
SS
(cathode con-
(1)
A
= 0 to 70°C or –40 to 85°C; V
M48Z35/Y
M48Z35Y
M48Z35
Figure 12. Supply Voltage Protection
Min
V CC
4.5
4.2
10
CC
= 4.75 to 5.5V or 4.5 to 5.5V (except where noted).
0.1 F
4.35
Typ
4.6
3.0
M48Z35, M48Z35Y
V CC
V SS
Max
4.75
4.5
DEVICE
AI02169
YEARS
Unit
V
V
V
13/20