CS18LV20483ACC-55 ETC1 [List of Unclassifed Manufacturers], CS18LV20483ACC-55 Datasheet - Page 6

• Manufacturer Part Number: CS18LV20483ACC-55
• Description: High Speec Super Low Power SRAM
• Manufacturer: ETC1 [List of Unclassifed Manufacturers]

1. Read Cycle Time.
Parameter Name
1. Typical characteristics are at TA = 25
2. These are absolute values with respect to device ground and all overshoots due to system or
3.
Parameter
Name
V
V
I
I
V
V
I
I
I
IL
OL
CC
CCSB
CCSB1
DC ELECTRICAL CHARACTERISTICS
tester notice are included.
Fmax = 1/t
DATA RETENTION CHARACTERISTICS
IL
IH
OL
OH
I
T
Chiplus reserves the right to change product or specification without notice.
V
CCDR
CDR
t
DR
R
Guaranteed Input Low
Voltage
Guaranteed Input High
Voltage
Input Leakage Current V
Output Leakage
Current
Output Low Voltage
Output High Voltage
Operating Power
Supply Current
Standby Supply - TTL
Standby Current
-CMOS
RC
.
Parameter
(2)
(2)
V
Data Retention Current /CE≧V
Chip Deselect to Data
Retention Time
Operation Recovery
Time
CC
256K-Word By 8 Bit
for Data Retention /CE≧V
Parameter
High Speed Super Low Power SRAM
V
/OE=V
V
V
/CE=V
/CE=V
/CE≧V
V
CC
CC
CC
CC
CC
=MAX, V
=MAX, /CE=V
=MAX, I
=MIN, I
-0.2V or V
Test Conduction
o
IL
IH
IN
C.
CC
, I
, I
V
V
, V
6
DQ
-0.2V, V
IN
IN
DQ
See Retention Waveform
OH
≧V
≧V
IO
OL
=0mA, F=F
=0mA,
Test Conduction
IN
=0V to V
= -1mA
IN
=0 to V
= 2mA
CC
CC
≦0.2V
CC
CC
-0.2V or V
-0.2V or V
IN
IN
-0.2V,
-0.2V, V
≧
, or
CC
CC
MAX
( TA = 0 to + 70
( TA =
CC=
(3)
IN
IN
≦0.2V
≦0.2V
1.5V
MIN
-0.5
2.0
2.4
-1
-1
0 to + 70
MIN
TYP
t
1.5
RC
o
0
C , Vcc = 3.0V )
CS18LV20483
0.5
o
C
(1)
)
(1)
TYP MAX Unit
0.3
Vcc+0.2
MAX
0.8
0.4
25
1
1
1
4
2
Rev. 1.0
Unit
mA
mA
uA
uA
uA
V
V
V
V
uA
ns
ns
V