DAC1208D650HN NXP [NXP Semiconductors], DAC1208D650HN Datasheet - Page 10
![no-image](/images/no-image-200.jpg)
DAC1208D650HN
Manufacturer Part Number
DAC1208D650HN
Description
Manufacturer
NXP [NXP Semiconductors]
Datasheet
1.DAC1208D650HN.pdf
(98 pages)
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NXP Semiconductors
Table 5.
V
+85
maximum sample rate; PLL off unless otherwise specified.
DAC1208D650
Product data sheet
Symbol
f
Dynamic performances
SFDR
SFDR
IMD3
ACPR
step
DDA(1V8)
°
C; typical values measured at V
RBW
= V
Characteristics
DDD
Parameter
step frequency
spurious-free dynamic
range
restricted bandwidth
spurious-free dynamic
range
third-order
intermodulation
distortion
adjacent channel
power ratio
= 1.7 V to 1.9 V; V
…continued
DDA(3V3)
DDA(1V8)
Conditions
f
f
BW = f
f
f
BW = f
f
f
BW = f
f
4× interpolation;
f
BW = 100 MHz
f
4× interpolation;
f
BW = 20 Mhz
f
f
4× interpolation
f
f
f
4× interpolation
f
f
f
4× interpolation
NCO on; 4× interpolation;
f
1 carrier; BW = 5 MHz
2 carriers; BW = 10 MHz
4 carriers; BW = 20 MHz
NCO on; 4× interpolation;
f
1 carrier; BW = 5 MHz
2 carriers; BW = 10 MHz
4 carriers; BW = 20 MHz
data
s
data
s
data
s
s
o
s
o
o1
s
o1
o2
s
o1
o2
s
s
s
All information provided in this document is subject to legal disclaimers.
= 640 Msps; ×8;
= 640 Msps; ×4;
= 625 Msps; ×2;
= 640 Msps;
= 640 Msps;
= 640 Msps;
= 640 Msps;
= 640 Msps;
= 640 Msps; f
= 640 Msps; f
f
f
f
= 133 MHz at −1 dBFS;
= 133 MHz at −1 dBFS;
o
o
o
= 3.13 V to 3.47 V; AGND and GND are shorted together; T
= 95 MHz; f
= 153.1 MHz;
= 154.1 MHz;
= 137 MHz;
= 143 MHz;
= V
= 4 MHz at −1 dBFS
= 19 MHz at −1 dBFS
= 19 MHz at −1 dBFS
= 80 Msps;
= 160 Msps;
= 312.5 Msps;
data
data
data
DDD
Rev. 2 — 14 December 2010
/ 2; PLL on
/ 2
/ 2
= 1.8 V; V
o2
o
o
2×, 4× or 8× interpolating DAC with JESD204A interface
= 97 MHz;
= 96 MHz
= 133 MHz
DDA(3V3)
= 3.3 V; T
Test
D
C
C
I
I
C
C
I
C
C
C
C
C
C
C
[1]
[7]
[7]
[7]
amb
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
= +25
DAC1208D650
°
C; R
Typ
20.3
77
74
75
81
84
81
77
80
74
70
68
75
71
67
L
= 50
-
-
-
-
-
-
Max
-
-
-
-
-
-
-
-
Ω
© NXP B.V. 2010. All rights reserved.
amb
; I
O(fs)
=
−
40
= 20 mA;
°
Unit
MHz
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
C to
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