M29W640GB NUMONYX [Numonyx B.V], M29W640GB Datasheet - Page 75

• Manufacturer Part Number: M29W640GB
• Description: 64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory
• Manufacturer: NUMONYX [Numonyx B.V]

M29W640GH, M29W640GL, M29W640GT, M29W640GB
Table 32.
1Bh
1Ch
1Dh
1Eh
x16
1Fh
20h
21h
22h
23h
24h
25h
26h
Address
3Ch
3Ah
3Eh
4Ah
4Ch
36h
38h
40h
42h
44h
46h
48h
x8
CFI query system interface information
00C5h
00B5h
000Ah
0027h
0036h
0004h
0000h
0000h
0004h
0000h
0003h
0000h
Data
V
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
Typical timeout per single Byte/Word program = 2
Typical timeout for minimum size write buffer program = 2
Typical timeout per individual Block Erase = 2
Typical timeout for full Chip Erase = 2
Maximum timeout for Byte/Word program = 2
Maximum timeout for write buffer program = 2
Maximum timeout per individual Block Erase = 2
Maximum timeout for Chip Erase = 2
CC
CC
PP
PP
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase voltage
Logic Supply Maximum Program/Erase voltage
Description
n
n
times typical
ms
n
n
n
times typical
ms
times typical
n
n
times typical
µs
Common Flash Interface (CFI)
n
µs
256µs
Value
11.5V
12.5V
16µs
2.7V
3.6V
NA
NA
NA
NA
1s
8s
75/90