M29W640GB NUMONYX [Numonyx B.V], M29W640GB Datasheet - Page 37

• Manufacturer Part Number: M29W640GB
• Description: 64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory
• Manufacturer: NUMONYX [Numonyx B.V]

M29W640GH, M29W640GL, M29W640GT, M29W640GB
Figure 6.
1. Only the third and fourth cycles of the Program command are represented. The Program command is followed by the check
2. PA is address of the memory location to be programmed. PD is the data to be programmed.
3. DQ7 is the complement of the data bit being programmed to DQ7 (see
4. Addresses differ in x8 mode.
5. See
of Status register Data Polling bit and by a read operation that outputs the data, D
Program command.
Table 19: Write ac characteristics
DQ0-DQ7/
DQ8-DQ15
A0-A20/
A–1
E
G
W
Write Enable controlled Program waveforms (8-bit mode)
tAVAV
tGHWL
tELWL
tWLWH
tDVWH
3rd cycle
tAVWL
and
555h
AOh
Table 18: Read ac characteristics
4th cycle
tWHEH
tWHDX
PA
tWHWL
PD
tWLAX
tWHWH1
Data Polling
PA
DQ7
for details on the timings.
Section 5.1: Data Polling Bit
D OUT
tAVAV
OUT
tGHQZ
Read cycle
, programmed by the previous
D OUT
tELQV
tGLQV
(DQ7)).
Command Interface
tAXQX
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