UNR111T PANASONIC [Panasonic Semiconductor], UNR111T Datasheet - Page 4
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UNR111T
Manufacturer Part Number
UNR111T
Description
Silicon NPN, PNP epitaxial planar type (Tr1,2)
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
1.UNR111T.pdf
(5 pages)
UP03396
4
Characteristics charts of Tr2
−140
−120
−100
−80
−60
−40
−20
0.1
10
1
0
0
0
Collector-emitter voltage V
− 0.7 mA
Collector-base voltage V
T
a
= 25°C
−2
− 0.8 mA
10
C
−4
I
C
ob
− 0.9 mA
V
V
20
−6
CE
CB
−8
I
B
f = 1 MHz
T
30
a
= −1.0 mA
CB
= 25°C
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.2 mA
− 0.3 mA
− 0.1 mA
−10
CE
(V)
( V )
−12
40
− 0.01
− 0.01
− 0.1
− 0.1
−10
−10
−1
−1
− 0.1
− 0.5
V
T
a
O
= 25°C
Collector current I
= −5 V
Input voltage V
SJJ00295AED
V
−1.0
−1
I
CE(sat)
T
O
a
25°C
= 85°C
V
I
IN
−1.5
−10
IN
C
C
−25°C
I
( mA )
( V )
C
/ I
B
= 10
−100
−2.0
−100
− 0.1
−10
250
200
150
100
−1
50
− 0.1
− 0.1
0
V
V
T
a
O
CE
= 25°C
= − 0.2 V
= −10 V
Collector current I
Output current I
−1
−1
V
h
FE
IN
−10
I
I
T
a
−25°C
25°C
= 85°C
C
O
O
−10
C
−100
( mA )
( mA )
−1 000
−100