MA740 PANASONIC [Panasonic Semiconductor], MA740 Datasheet

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MA740

Manufacturer Part Number
MA740
Description
Silicon epitaxial planar type
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet

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MA740
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Schottky Barrier Diodes (SBD)
MA3X740
Silicon epitaxial planar type
For super high speed switching circuit
For small current rectification
I Features
I Absolute Maximum Ratings T
Note) * 1 : Value per chip
I Electrical Characteristics T
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
• Two MA3X721s are contained in one package (series connec-
• Allowing to rectify under (I
Reverse voltage (DC)
Repetitive peak reverse voltage
Average forward
current
Peak forward
current
Non-repetitive peak
forward surge current
Junction temperature
Storage temperature
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
tion)
(single diode value)
Pulse Generator
(PG-10N)
R
* 2 : The peak-to-peak value in one cycle of 50 Hz sine-wave
2. Rated input/output frequency: 1 000 MHz
3. * : t
s
= 50 Ω
human body and the leakage of current from the operating equipment.
Parameter
(non-repetitive)
Parameter
rr
measuring instrument
Bias Application Unit N-50BU
* 2
A
Single
Double
Single
Double
Single
Double
*
W.F.Analyzer
(SAS-8130)
R
* 1
* 1
* 1
i
= 50 Ω
F(AV)
Symbol
V
I
I
F(AV)
I
T
V
FSM
RRM
T
= 200 mA) condition
FM
stg
R
a
j
Symbol
= 25°C
V
C
a
I
t
R
rr
F
t
= 25°C
−55 to +150
Rating
200
130
300
220
150
0.7
30
30
1
V
I
V
I
I
F
F
rr
V
R
R
= 200 mA
= I
R
= 10 mA, R
= 30 V
= 0 V, f = 1 MHz
R
t
= 100 mA
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
Unit
mA
mA
°C
°C
V
V
A
t
Conditions
p
L
= 100 Ω
t
I
F
Marking Symbol: M3C
Internal Connection
I
I
R
Output Pulse
F
R
L
= 100 mA
= 100 mA
= 100 Ω
I
t
rr
rr
= 10 mA
0.65 ± 0.15
0.1 to 0.3
0.4 ± 0.2
Min
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
t
1
2
Anode 2
1
2
Typ
Mini Type Package (3-pin)
30
1.5
2.8
3
+ 0.25
− 0.05
+ 0.2
− 0.3
JEDEC : TO-236
EIAJ : SC-59
Max
0.55
3
50
3
0.65 ± 0.15
Unit : mm
Unit
µA
pF
ns
V
1

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MA740 Summary of contents

Page 1

Schottky Barrier Diodes (SBD) MA3X740 Silicon epitaxial planar type For super high speed switching circuit For small current rectification I Features • Two MA3X721s are contained in one package (series connec- tion) • Allowing to rectify under (I F(AV) (single ...

Page 2

MA3X740  100°C 25° 150°C − 20° −1 10 − 0.1 0.2 0.3 0.4 0.5 0 Forward voltage V F  V ...

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