MA737 PANASONIC [Panasonic Semiconductor], MA737 Datasheet
MA737
Manufacturer Part Number
MA737
Description
Silicon epitaxial planar type
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
1.MA737.pdf
(2 pages)
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Quantity
Price
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Part Number:
MA737
Manufacturer:
PANASONIC
Quantity:
56 000
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Part Number:
MA737-(TX)
Manufacturer:
INFINEON
Quantity:
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Schottky Barrier Diodes (SBD)
MA2Q737
Silicon epitaxial planar type
For high-frequency rectification
I Features
I Absolute Maximum Ratings T
Note) * 1 : With a printed-circuit board (copper foil area 2.5 mm × 2.5 mm
I Electrical Characteristics T
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
• Forward current (average) I
• Reverse voltage (DC value) V
• Allowing automatic insertion with the emboss taping
Reverse voltage (DC)
Repetitive peak reverse voltage
Average forward current
Non-repetitive peak forward
surge current
Junction temperature
Storage temperature
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
Pulse Generator
(PG-10N)
R
s
* 2 : The peak-to-peak value in one cycle of 50 Hz sine-wave
2. Rated input/output frequency: 20 MHz
3. * : t
= 50 Ω
human body and the leakage of current from the operating equipment.
Parameter
+ 0.8 mm × 20 mm or more on both cathode and anode sides)
(non-repetitive)
Parameter
Bias Application Unit N-50BU
rr
* 2
measuring instrument
A
*
W.F.Analyzer
(SAS-8130)
R
i
* 1
= 50 Ω
F(AV)
R
Symbol
: 30 V
V
I
I
F(AV)
: 1.5 A type
T
V
FSM
RRM
T
stg
R
a
j
Symbol
= 25°C
V
C
a
I
t
R
rr
F
t
= 25°C
V
−40 to +125
−40 to +125
R
Rating
1.5
t
30
30
60
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
V
I
V
I
I
= 0.35 ns
F
F
rr
= 2 µs
R
R
= 2 A
= I
t
= 10 mA, R
p
= 30 V
= 10 V, f = 1 MHz
R
= 100 mA
t
Unit
°C
°C
V
V
A
A
Conditions
L
I
F
= 100 Ω
I
I
R
Output Pulse
F
R
L
= 100 mA
= 100 mA
= 100 Ω
I
t
rr
rr
= 10 mA
Marking Symbol: PC
t
2
New Mini-Power Type Package (2-pin)
Min
1.2 ± 0.4
4.4 ± 0.3
5.0
+ 0.4
− 0.1
Typ
70
1
1.2 ± 0.4
Max
0.5
50
1
0 to 0.05
1 : Anode
2 : Cathode
Unit : mm
Unit
mA
pF
ns
V
1
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MA737 Summary of contents
Page 1
Schottky Barrier Diodes (SBD) MA2Q737 Silicon epitaxial planar type For high-frequency rectification I Features • Forward current (average) I F(AV) • Reverse voltage (DC value • Allowing automatic insertion with the emboss taping I Absolute ...
Page 2
MA2Q737 F(AV) a (1) Printed-circuit board: Glass epoxy board (2) Printed-circuit board: Alumina board Copper foil for both A and K sides 2.5 mm × 2 0.8 mm × 0.8 2.5 ...