MA744 PANASONIC [Panasonic Semiconductor], MA744 Datasheet

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MA744

Manufacturer Part Number
MA744
Description
Silicon epitaxial planar type
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MA744
Manufacturer:
Panasonic
Quantity:
39 000
Part Number:
MA744-(TX)
Manufacturer:
PANA
Quantity:
3 356
Part Number:
MA744-(TX)
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Schottky Barrier Diodes (SBD)
MA3J744
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
I Features
I Absolute Maximum Ratings T
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
I Electrical Characteristics T
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
• Small S-mini type package allowing high-density mounting
• Allowing to rectify under (I
Reverse voltage (DC)
Repetitive peak reverse voltage
Average forward current
Peak forward current
Non-repetitive peak forward
surge current
Junction temperature
Storage temperature
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
Pulse Generator
(PG-10N)
R
2. Rated input/output frequency: 1 000 MHz
3. * : t
s
= 50 Ω
human body and the leakage of current from the operating equipment.
Parameter
(non-repetitive)
Parameter
rr
*
measuring instrument
Bias Application Unit N-50BU
A
*
W.F.Analyzer
(SAS-8130)
R
i
= 50 Ω
F(AV)
Symbol
V
I
I
F(AV)
I
T
V
FSM
RRM
T
= 200 mA) condition
FM
stg
R
a
j
Symbol
= 25°C
V
C
a
I
t
R
rr
F
t
= 25°C
−55 to +150
Rating
200
300
150
30
30
1
V
I
V
I
I
F
F
rr
V
R
R
= 200 mA
= I
R
= 10 mA, R
= 30 V
= 0 V, f = 1 MHz
R
t
= 100 mA
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
Unit
mA
mA
°C
°C
V
V
A
t
Conditions
p
L
= 100 Ω
t
I
F
Marking Symbol: M1M
Internal Connection
I
I
R
Output Pulse
F
R
L
= 100 mA
= 100 mA
= 100 Ω
I
t
rr
rr
= 10 mA
0.425
Min
t
1
2
Flat S- Mini Type Package (3-pin)
1
2
1.25 ± 0.1
2.1 ± 0.1
Typ
30
3
Max
0.55
3
50
3
0.425
EIAJ : SC-70
1 : Anode
2 : NC
3 : Cathode
Unit : mm
Unit
µA
pF
ns
V
1

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MA744 Summary of contents

Page 1

Schottky Barrier Diodes (SBD) MA3J744 Silicon epitaxial planar type For super-high speed switching circuit For small current rectification I Features • Small S-mini type package allowing high-density mounting • Allowing to rectify under (I F(AV) I Absolute Maximum Ratings T ...

Page 2

MA3J744  100°C 25° 150°C T − 20° −1 10 − 0.1 0.2 0.3 0.4 0.5 0.6 Forward voltage  V ...

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