MA781 PANASONIC [Panasonic Semiconductor], MA781 Datasheet
MA781
Manufacturer Part Number
MA781
Description
Silicon epitaxial planar type
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
1.MA781.pdf
(3 pages)
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Schottky Barrier Diodes (SBD)
MA3S781
Silicon epitaxial planar type
For switching
I Features
I Absolute Maximum Ratings T
I Electrical Characteristics T
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
Publication date: August 2001
• High-density mounting is possible
• Optimum for high frequency rectification because of its short
• Low forward voltage V
• SS-Mini type 3-pin package
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Peak forward current
Junction temperature
Storage temperature
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
Detection efficiency
reverse recovery time (t
2. Rated input/output frequency: 2 GHz
and the leakage of current from the operating equipment.
Parameter
Parameter
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Bias Application Unit N-50BU
*
A
F
rr
and good rectification efficiency
)
(MA781)
Wave Form Analyzer
(SAS-8130)
R
Symbol
i
= 50 Ω
V
I
T
V
I
T
FM
RM
stg
F
R
a
j
Symbol
= 25°C
V
V
C
I
t
a
η
R
rr
F1
F2
t
= 25°C
−55 to +125
Rating
150
125
3. * : t
30
30
30
V
I
I
V
I
I
V
R
F
F
F
rr
Note) The part number in the parenthesis shows conventional part number.
L
R
R
in
= 1 mA
= 30 mA
= I
= 1 mA, R
SKH00060AED
rr
= 3.9 kΩ, C
= 30 V
= 1 V, f = 1 MHz
= 3 V
V
measuring instrument
R
R
= 10 mA
(peak)
t
r
Unit
mA
mA
Input Pulse
10%
°C
°C
t
t
δ = 0.05
V
V
p
r
90%
Conditions
= 0.35 ns
L
= 2 µs
, f = 30 MHz
= 100 Ω
t
L
p
= 10 pF
t
I
Marking Symbol: M1L
Internal Connection
F
(0.51)
1 : Anode
2 : N.C.
3 : Cathode
EIAJ : SC-89
I
I
R
F
R
Output Pulse
L
= 10 mA
= 10 mA
= 100 Ω
3°
(0.80)
t
I
1.60
rr
rr
1 2
= 1 mA
+0.05
–0.03
(0.80)
Min
3
0.28
t
±0.05
0.28
(0.51)
1
±0.05
Typ
1.5
1.0
3
65
2
SSMini3-F2 Package
Max
300
0.4
1
Unit: mm
0.12
0.60
Unit
nA
pF
ns
%
+0.05
–0.02
+0.05
–0.03
V
1
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MA781 Summary of contents
Page 1
... Schottky Barrier Diodes (SBD) MA3S781 (MA781) Silicon epitaxial planar type For switching I Features • High-density mounting is possible • Optimum for high frequency rectification because of its short reverse recovery time ( • Low forward voltage V and good rectification efficiency F • SS-Mini type 3-pin package ...
Page 2
MA3S781 75°C 25° −20°C = 125° −1 10 − 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage ...
Page 3
... No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. ...