UNR1110 PANASONIC [Panasonic Semiconductor], UNR1110 Datasheet - Page 3

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UNR1110

Manufacturer Part Number
UNR1110
Description
Silicon PNP epitaxial planer transistor
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
Common characteristics chart
Characteristics charts of UNR1110
−120
−100
500
400
300
200
100
−80
−60
−40
−20
− 0.1
0
6
5
4
3
2
1
0
0
0
0
I
Collector-emitter voltage V
B
Collector-base voltage V
Ambient temperature T
= −1.0 mA
− 0.9 mA
−2
− 0.8 mA
40
C
−1
−4
I
P
C
ob
− 0.7 mA
T
 V
 V
 T
80
−6
− 0.6 mA
CE
− 0.5 mA
CB
a
−10
−8
− 0.4 mA
f = 1 MHz
I
T
120
T
E
a
a
CB
a
= 0
− 0.2 mA
− 0.1 mA
= 25°C
− 0.3 mA
= 25°C
−10
CE
( °C )
(V)
( V )
−100
160
−12
− 0.01
−100
− 0.1
−10
−10
−10
−10
−10
−1
−1
−0.1
− 0.4
4
3
2
Collector current I
−25°C
− 0.6
SJH00001BED
Input voltage V
V
−1
I
CE(sat)
O
− 0.8
25°C
 V
 I
−1.0
T
IN
−10
a
IN
C
= 75°C
C
I
( mA )
( V )
C
V
T
−1.2
/ I
a
O
= 25°C
B
= −5 V
= 10
−100
−1.4
− 0.01
−100
− 0.1
400
300
200
100
−10
−1
0
− 0.1
−1
Collector current I
Output current I
UNR111x Series
−10
−1
V
h
FE
IN
 I
 I
−100
C
O
−10
O
T
C
a
V
V
T
25°C
−25°C
( mA )
= 75°C
( mA )
a
CE
O
= 25°C
= − 0.2 V
= –10 V
−1 000
−100
3

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