BUD700D-SMD VAISH [Vaishali Semiconductor], BUD700D-SMD Datasheet - Page 2

• Manufacturer Part Number: BUD700D-SMD
• Description: Silicon NPN High Voltage Switching Transistor
• Manufacturer: VAISH [Vaishali Semiconductor]

Maximum Thermal Resistance
T
Electrical Characteristics
T
Switching Characteristics
T
BUD700D
Vishay Telefunken
Junction case
Transistor
Collector cut-off current
Collector-emitter breakdown
voltage (figure 1)
Emitter-base breakdown voltage
Collector-emitter saturation voltage I
Base-emitter saturation voltage
DC forward current transfer ratio
Collector-emitter working voltage
Dynamic saturation voltage
Gain bandwidth product
Free-wheel diode
Forward voltage
Application specific switching time
measured with Nylos3
Resistive load (figure 2)
Turn on time
Storage time
Fall time
www.vishay.de FaxBack [phone]
2 (8)
case
case
case
y
= 25 C, unless otherwise specified
= 25 C, unless otherwise specified
= 25 C, unless otherwise specified
Parameter
Parameter
Parameter
I
–I
g
C
C
B2
= 330 mA; I
= 170 mA; V
Test Conditions
V
V
I
I
I
I
V
V
V
V
I
–V
I
I
I
f = 1 MHz
I
C
measure
E
C
C
B1
C
C
C
F
B1
B1
CE
CE
CE
CE
CE
S
= 0.7 A
= 1 mA
= 300 mA; L = 125 mH;
= 0.3 A; I
= 0.3 A; I
= 1 A; I
= 1 A; I
= 200 mA; V
BB
= 50 V; L = 1 mH; I
= 0.7 A; –I
= 85 mA;
S
= 700 V
= 700 V; T
= 2 V; I
= 2 V; I
= 5 V; I
= 5 V
= 250 V
Test Conditions
Test Conditions
= 100 mA
B
B
B
B
= 0.2 A; t = 1
= 0.2 A; t = 3
C
C
C
= 0.1 A
= 0.1 A
= 10 mA
= 0.3 A
= 2 A
B2
case
CE
= 0.2 A;
= 10 V;
= 150 ° C
C
= 2 A;
m
m
Symbol
s
s
t
t
on
t
t
x
s
f
V
V
V
V
Symbol
V
V
CEsatdyn
CEsatdyn
(BR)CEO
(BR)EBO
V
Symbol
I
I
h
h
h
CEsat
BEsat
CES
CES
CEW
V
R
f
FE
FE
FE
Min
T
F
thJC
Min
400
500
11
10
10
4
4
Typ
Document Number 86505
Value
Typ
0.1
0.9
5
6
0.75
0.25
Max
Rev. 1, 20–Jan–99
0.4
3
Max
0.5
0.2
1.2
50
15
1
4
K/W
Unit
Unit
m
m
m
m
MHz
Unit
mA
m
s
s
s
s
V
V
V
V
V
V
V
V
A