SSU1N50A FAIRCHILD [Fairchild Semiconductor], SSU1N50A Datasheet
SSU1N50A
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SSU1N50A Summary of contents
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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 Lower R : 4.046 DS(ON) Absolute Maximum Ratings Symbol V Drain-to-Source Voltage DSS Continuous ...
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SSR/U1N50A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R ...
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N-CHANNEL POWER MOSFET Fig 1. Output Characteristics V GS Top : 8 6.0 V 5.5 V 5.0 V Bottom : 4 Notes : 1. 250 ...
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SSR/U1N50A Fig 7. Breakdown Voltage vs. Temperature 1.2 1.1 1.0 0.9 0.8 -75 -50 - Junction Temperature [ J Fig 9. Max. Safe Operating Area Operation in This Area is Limited ...
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N-CHANNEL POWER MOSFET “ Current Regulator ” 50K 12V 200nF 300nF V GS 3mA R 1 Current Sampling (I G Resistor Fig 13. Resistive Switching Test Circuit & Waveforms V out DUT 10V Fig 14. Unclamped ...
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SSR/U1N50A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT Driver Driver ) DUT ) DUT ) + ...
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TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ...