FQD30N06L FAIRCHILD [Fairchild Semiconductor], FQD30N06L Datasheet
FQD30N06L
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FQD30N06L Summary of contents
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... A = 25°C) C Parameter May 2001 QFET = 0.039 @ V = 10V DS(on " " ! " ! " " " " " FQD30N06L / FQR30N06L Units 400 4.4 mJ 7.0 V/ns 2 0.35 W/°C -55 to +150 °C 300 °C Typ ...
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Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS / T Coefficient J I DSS Zero Gate Voltage Drain Current I Gate-Body Leakage Current, Forward GSSF I Gate-Body Leakage Current, Reverse GSSR On ...
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Typical Characteristics V GS Top : 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3 ※ Notes : 1. 250μ s Pulse Test 25℃ ...
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Typical Characteristics 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 7. Breakdown Voltage Variation vs. Temperature Operation in This Area is Limited by R DS(on ※ ...
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3mA 3mA Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & ...
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Peak Diode Recovery dv/dt Test Circuit & Waveform Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( ...
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Package Dimensions 6.60 5.34 (0.50) (4.34) MAX0.96 2.30TYP [2.30 0.20] ©2001 Fairchild Semiconductor Corporation DPAK 0.20 0.30 (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 6.60 0.20 (5.34) (5.04) (1.50) (2XR0.25) 0.76 ...
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Package Dimensions (Continued) 6.60 0.20 5.34 0.20 (0.50) (4.34) MAX0.96 0.76 0.10 2.30TYP [2.30 0.20] ©2001 Fairchild Semiconductor Corporation IPAK (0.50) 2.30TYP [2.30 0.20] 2.30 0.20 0.50 0.10 0.50 0.10 Rev. A1. May 2001 ...
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TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ DOME™ ...