MA784 PANASONIC [Panasonic Semiconductor], MA784 Datasheet
MA784
Manufacturer Part Number
MA784
Description
Schottky Barrier Diodes (SBD)
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
1.MA784.pdf
(3 pages)
Schottky Barrier Diodes (SBD)
MA2Z784
Silicon epitaxial planar type
For super high speed switching
For small current rectification
I Features
I Absolute Maximum Ratings T
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
I Electrical Characteristics T
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
Publication date: August 2001
• High-density mounting is possible
• I
• Optimum for high frequency rectification because of its short
• Low forward voltage V
• S-Mini type 2-pin package
Reverse voltage (DC)
Repetitive peak reverse-voltage
Peak forward current
Average forward current
Non-repetitive peak forward-s
surge-current
Junction temperature
Storage temperature
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
reverse recovery time (t
F(AV)
2. Rated input/output frequency: 250 MHz
3. * : t
and the leakage of current from the operating equipment.
= 100 mA rectification is possible
Parameter
rr
Parameter
measuring instrument
*
Pulse Generator
(PG-10N)
R
s
= 50 Ω
*
Bias Application Unit N-50BU
F
rr
and good rectification efficiency
)
A
(MA784)
Symbol
V
I
I
F(AV)
I
T
V
FSM
RRM
T
FM
stg
R
a
j
Wave Form Analyzer
(SAS-8130)
R
Symbol
i
= 25°C
= 50 Ω
V
C
I
t
a
R
rr
F
t
= 25°C
−55 to +125
Rating
300
100
125
30
30
1
V
I
V
I
I
F
F
rr
Note) The part number in the parenthesis shows conventional part number.
R
R
= 100 mA
= I
= 10 mA, R
SKH00037AED
= 30 V
= 0 V, f = 1 MHz
R
= 100 mA
Unit
mA
mA
°C
°C
V
V
A
Conditions
V
L
R
= 100 Ω
t
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
t
p
Marking Symbol: 2D
1 : Anode
2 : Cathode
EIAJ : SC-90A
t
5°
1.25
I
±0.1
F
1
0.5
2
Min
I
I
R
F
R
Output Pulse
L
= 100 mA
±0.1
0.35
= 100 mA
= 100 Ω
±0.1
I
t
rr
rr
= 10 mA
Typ
2.0
20
0 to 0.1
0.16
t
SMini2-F1 Package
Max
+0.1
–0.06
0.55
0.7
15
±0.1
Unit: mm
Unit
µA
pF
ns
V
1
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MA784 Summary of contents
Page 1
... Schottky Barrier Diodes (SBD) MA2Z784 (MA784) Silicon epitaxial planar type For super high speed switching For small current rectification I Features • High-density mounting is possible • 100 mA rectification is possible F(AV) • Optimum for high frequency rectification because of its short reverse recovery time ( • ...
Page 2
MA2Z784 75°C 25° 125°C −20° −1 10 − 0.1 0.2 0.3 0.4 0.5 0.6 Forward voltage ...
Page 3
... No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. ...