MA786 PANASONIC [Panasonic Semiconductor], MA786 Datasheet
MA786
Manufacturer Part Number
MA786
Description
Silicon epitaxial planar type
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
1.MA786.pdf
(2 pages)
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Schottky Barrier Diodes (SBD)
MA3X786
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
I Features
I Absolute Maximum Ratings T
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
I Electrical Characteristics T
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
• Allowing to rectify under (I
• Optimum for high-frequency rectification because of its short
• Low V
Reverse voltage (DC)
Repetitive peak reverse voltage
Peak forward current
Average forward current
Non-repetitive peak forward
surge current
Junction temperature
Storage temperature
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
reverse recovery time (t
Pulse Generator
(PG-10N)
R
2. Rated input/output frequency: 250 MHz
3. * : t
s
= 50 Ω
F
human body and the leakage of current from the operating equipment.
Parameter
(forward rise voltage), with high rectification efficiency
(non-repetitive)
Parameter
rr
*
measuring circuit
Bias Application Unit N-50BU
A
*
W.F.Analyzer
(SAS-8130)
R
rr
i
)
= 50 Ω
F(AV)
Symbol
V
I
I
F(AV)
I
T
V
FSM
RRM
T
= 100 mA) condition
FM
stg
R
a
j
Symbol
= 25°C
V
C
a
I
t
R
rr
F
t
= 25°C
−55 to +125
Rating
300
100
125
30
30
1
V
I
V
I
I
F
F
rr
V
R
R
= 100 mA
= I
R
= 10 mA, R
= 30 V
= 0 V, f = 1 MHz
R
t
= 100 mA
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
Unit
mA
mA
°C
°C
V
V
A
t
Conditions
p
L
= 100 Ω
t
I
F
Marking Symbol: M3T
Internal Connection
I
I
R
Output Pulse
F
R
L
= 100 mA
= 100 mA
= 100 Ω
I
t
rr
0.65 ± 0.15
rr
0.1 to 0.3
0.4 ± 0.2
= 10 mA
Min
t
1
2
1 : Anode
2 : NC
3 : Cathode
1
2
Typ
1.5
2.8
20
Mini Type Package(3-pin)
2
+ 0.25
− 0.05
+ 0.2
− 0.3
JEDEC : TO-236
EIAJ : SC-59
Max
0.55
3
15
3
0.65 ± 0.15
Unit : mm
Unit
µA
pF
ns
V
1
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MA786 Summary of contents
Page 1
Schottky Barrier Diodes (SBD) MA3X786 Silicon epitaxial planar type For super-high speed switching circuit For small current rectification I Features • Allowing to rectify under (I F(AV) • Optimum for high-frequency rectification because of its short reverse recovery time (t ...
Page 2
MA3X786 75°C 25° 125°C − 20° −1 10 − 0.1 0.2 0.3 0.4 0.5 0 Forward voltage V F V ...