SI4910DY VAISH [Vaishali Semiconductor], SI4910DY Datasheet - Page 2

• Manufacturer Part Number: SI4910DY
• Description: N-Channel 40-V (D-S) MOSFET
• Manufacturer: VAISH [Vaishali Semiconductor]

SPICE Device Model Si4910DY
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
2
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
b
Parameter
a
a
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
DS(on)
C
V
C
C
Q
Q
D(on)
GS(th)
Q
g
SD
oss
rss
iss
fs
gs
gd
g
V
V
V
DS
DS
DS
= 20 V, V
= 20 V, V
= 20 V, V
V
V
V
Test Condition
V
DS
V
DS
GS
GS
DS
= V
= 4.5 V, I
≥ 5 V, V
= 10 V, I
= 15 V, I
I
S
GS
GS
GS
= 1.5 A
GS
, I
= 0 V, f = 1 MHz
= 4.5 V, I
= 10 V, I
D
GS
= 250 µA
D
D
D
= 4.8 A
= 10 V
= 6 A
= 6 A
D
D
= 5 A
= 5 A
Simulated
Data
0.026
0.021
1085
0.83
1.2
224
111
17
17
58
2.3
3.2
9
Measured
S-60411Rev. A, 20-Mar-06
Data
0.022
0.026
0.73
855
105
9.6
2.3
3.2
20
65
21
Document Number: 74168
Unit
nC
pF
Ω
V
A
S
V