k9f2g08q0m Samsung Semiconductor, Inc., k9f2g08q0m Datasheet - Page 9

• Manufacturer Part Number: k9f2g08q0m
• Description: 256m X 8 Bit / 128m X 16 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F2GXXX0M-XCB0
DC AND OPERATING CHARACTERISTICS
NOTE : V
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
Voltage on any pin relative to V
Temperature Under Bias
Storage Temperature
Short Circuit Current
Operat-
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Supply Voltage
Supply Voltage
Current
Maximum DC voltage on input/output pins is V
ing
Parameter
IL
Parameter
can undershoot to -0.4V and V
Page Read with
Serial Access
Program
Erase
Parameter
Symbol
V
V
K9F2GXXX0M-XCB0
K9F2GXXX0M-XIB0
K9F2GXXX0M-XCB0
K9F2GXXX0M-XIB0
CC
SS
Symbol
I
OL
SS
I
I
I
I
I
V
V
V
V
CC
CC
CC
SB
SB
I
(R/B)
I
LO
OH
LI
IH*
OL
IL*
1
2
1
2
3
IH
can overshoot to V
1.70
Min
tRC=30ns, CE=V
I
CE=V
CE=V
WP=PRE=0V/V
V
V
K9F2GXXQ0M :I
K9F2GXXU0M :I
K9F2GXXQ0M :I
K9F2GXXU0M :I
K9F2GXXQ0M :V
K9F2GXXU0M :V
0
OUT
IN
OUT
CC,
=0 to Vcc(max)
+0.3V which, during transitions, may overshoot to V
K9F2GXXQ0M(1.8V)
=0mA
=0 to Vcc(max)
Test Conditions
IH
CC
, WP=PRE=0V/V
-0.2,
:
T
A
=0 to 70 C, K9F2GXXX0M-XIB0
Typ.
1.8
-
-
-
-
0
CC
CC
OH
OL
OH
OL
IL
OL
OL
+0.4V for durations of 20 ns or less.
=2.1mA
=100uA
=-400 A
=-100 A
=0.4V
Symbol
=0.1V
V
(Recommended operating conditions otherwise noted.)
T
T
IN/OUT
V
Ios
BIAS
STG
CC
9
CC
Max
1.95
0
0.8xVcc
Vcc-0.1
Min
-0.3
K9F2GXXQ0M(1.8V)
3
-
-
-
-
-
-
K9F2GXXQ0M(1.8V) K9F2GXXU0M(3.3V)
-0.6 to + 2.45
-0.2 to + 2.45
Typ
Min
2.7
10
10
4
-
-
-
-
-
-
-
0
:
T
A
K9F2GXXU0M(3.3V)
=-40 to 85 C)
Vcc+0.3 0.8xVcc
0.2xVcc
CC
Max
-10 to +125
-40 to +125
-65 to +150
0.1
+2.0V for periods <20ns.
20
50
1
10
10
-
-
Rating
Typ.
5
3.3
FLASH MEMORY
0
Min
-0.3
2.4
K9F2GXXU0M(3.3V)
8
-
-
-
-
-
-
-0.6 to + 4.6
-0.6 to + 4.6
Preliminary
Typ
Max
15
10
10
3.6
-
-
-
-
-
-
-
0
Vcc+0.3
0.2xVcc
Max
0.4
30
50
1
10
10
-
-
Unit
Unit
mA
V
V
V
C
C
Unit
mA
mA
V
A