k9f2g08q0m Samsung Semiconductor, Inc., k9f2g08q0m Datasheet - Page 18

• Manufacturer Part Number: k9f2g08q0m
• Description: 256m X 8 Bit / 128m X 16 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Input Data Latch Cycle
Serial Access Cycle after Read
I/Ox
ALE
CE
RE
R/B
CLE
CE
WE
I/Ox
t
RR
NOTES : Transition is measured 200mV from steady state voltage with load.
t
CEA
t
ALS
t
REA
t
WP
t
RP
t
This parameter is sampled and not 100% tested.
DS
DIN 0
t
WC
t
RC
Dout
(CLE=L, WE=H, ALE=L)
t
DH
t
NOTES : DIN final means 2112(X8) or 1056(X16)
WH
t
REH
t
WP
t
REA
t
DS
DIN 1
18
t
DH
Dout
t
RHZ*
t
DIN final*
WP
t
DS
t
DH
t
CH
t
CLH
t
REA
FLASH MEMORY
Dout
t
t
t
t
Preliminary
CHZ*
OH
RHZ*
OH