k9f2g08q0m Samsung Semiconductor, Inc., k9f2g08q0m Datasheet - Page 2

• Manufacturer Part Number: k9f2g08q0m
• Description: 256m X 8 Bit / 128m X 16 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
Document Title
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Revision No
0.5
0.6
History
1. The value of AC parameters for K9F2G08U0M are changed.
2. The definition and value of setup and hold time are changed.
3. The tADL(Address to Data Loading Time) is added.
4. Added addressing method for program operation
1. PKG(TSOP1, WSOP1) Dimension Change
- tADL Minimum 100ns (Page 11, 22~25)
-
to the WE rising edge of first data cycle at program operation.
tADL is the time from the WE rising edge of final address cycle
ITEM
ITEM
t
t
t
t
t
t
t
t
t
t
t
t
t
REH
REA
CEA
ADL
t
t
t
t
CLS
CLH
ALS
ALH
WC
WP
WH
RC
RP
CH
DH
CS
DS
K9F2GXXQ0M
K9F2G16U0M
Before
45
25
15
50
25
15
30
45
25
10
35
10
25
10
20
10
-
K9F2G08U0M
2
K9F2G08U0M
After
100
30
15
10
30
15
10
18
23
10
15
10
10
5
5
5
5
FLASH MEMORY
Draft Date
Apr. 22.2004
May. 19. 2004
Preliminary
Remark
Preliminary