k9f2g08q0m Samsung Semiconductor, Inc., k9f2g08q0m Datasheet - Page 19
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k9f2g08q0m
Manufacturer Part Number
k9f2g08q0m
Description
256m X 8 Bit / 128m X 16 Bit Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K9F2G08Q0M.pdf
(38 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
k9f2g08q0m-TCBO
Manufacturer:
MIC
Quantity:
5 530
Company:
Part Number:
k9f2g08q0m-TIBO
Manufacturer:
SAM
Quantity:
2 000
Serial Access Cycle after Read
I/Ox
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Serial Access Cycle after Read
I/Ox
CE
RE
R/B
CE
RE
R/B
t
t
RR
RR
NOTES : Transition is measured 200mV from steady state voltage with load.
NOTES : Transition is measured 200mV from steady state voltage with load.
t
t
CEA
CEA
t
t
REA
REA
t
t
RP
RP
This parameter is sampled and not 100% tested.
This parameter is sampled and not 100% tested.
t
t
RC
RC
Dout
Dout
(CLE=L, WE=H, ALE=L)
(CLE=L, WE=H, ALE=L)
t
t
REH
REH
t
t
REA
REA
19
Dout
Dout
t
t
RHZ*
RHZ*
t
t
REA
REA
FLASH MEMORY
Dout
Dout
t
t
t
t
t
t
t
t
CHZ*
OH
RHZ*
OH
Preliminary
CHZ*
OH
RHZ*
OH