k9f2g08q0m Samsung Semiconductor, Inc., k9f2g08q0m Datasheet - Page 11

• Manufacturer Part Number: k9f2g08q0m
• Description: 256m X 8 Bit / 128m X 16 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
AC Timing Characteristics for Command / Address / Data Input
NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
AC Characteristics for Operation
NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
CLE setup Time
CLE Hold Time
CE setup Time
CE Hold Time
WE Pulse Width
ALE setup Time
ALE Hold Time
Data setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
ALE to Data Loading Time
Data Transfer from Cell to Register
ALE to RE Delay
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
RE Access Time
CE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
RE or CE High to Output hold
RE High Hold Time
Output Hi-Z to RE Low
WE High to RE Low
Device Resetting Time(Read/Program/Erase)
Parameter
Parameter
Symbol
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
CLS
CLH
ALS
ALH
ADL
WC
WH
CH
WP
DH
t
CS
DS
t
t
t
t
t
t
t
t
t
WHR
t
CLR
t
t
t
REA
CEA
RHZ
CHZ
REH
RST
WB
t
t
RR
RC
OH
AR
RP
IR
R
K9F2GXXQ0M(1.8V)
11
K9F2G16U0M(3.3V)
K9F2GXXQ0M(1.8V)
K9F2G16U0M(3.3V)
Min
100
25
10
35
10
25
25
10
20
10
45
15
Min
10
10
20
25
50
15
15
60
0
-
-
-
-
-
-
-
5/10/500
Max
Max
100
-
-
-
-
-
-
-
-
-
-
-
-
25
30
45
30
20
-
-
-
-
-
-
-
-
-
(1)
K9F2G08U0M(3.3V)
K9F2G08U0M(3.3V)
Min
100
10
15
15
10
10
30
10
Min
5
5
5
5
10
10
20
15
30
15
10
60
0
-
-
-
-
-
-
-
FLASH MEMORY
5/10/500
Max
Preliminary
Max
100
25
18
23
30
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
(1)
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s