buk482-100a NXP Semiconductors, buk482-100a Datasheet - Page 5

• Manufacturer Part Number: buk482-100a
• Description: Powermos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
January 1998
PowerMOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
V
I
GS
F
12
10
8
6
4
2
0
= f(V
= f(Q
Fig.14. Typical reverse diode current.
0
VGS/ V
7
6
5
4
3
2
1
0
0
SDS
IF/ A
G
); conditions: I
0.2 0.4 0.6 0.8
); conditions: V
Tj/ C = 150
2
4
QG/ nC
VSDS/ V
D
1
25
= 1.8 A; parameter V
GS
1.2 1.4 1.6 1.8
= 0 V; parameter T
6
VDS/ V = 20
BUK482-100A
8
2
80
10
DS
j
5
VGS
0
Fig.15. Normalised avalanche energy rating.
120
110
100
90
80
70
60
50
40
30
20
10
0
Fig.16. Avalanche energy test circuit.
W
20
WDSS%
DSS
W
DSS
% = f(T
RGS
40
0.5 LI
amb
60
); conditions: I
D
2
BV
Tamb/ C
80
Normalised Avalanche Energy
DSS
L
VDS
100
BV
T.U.T.
Product Specification
BUK482-100A
DSS
D
120
shunt
= 1.8 A
R 01
V
DD
-
+
140
Rev 1.100
-ID/100
VDD