buk482-100a NXP Semiconductors, buk482-100a Datasheet - Page 2

• Manufacturer Part Number: buk482-100a
• Description: Powermos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
AVALANCHE LIMITING VALUE
January 1998
PowerMOS transistor
j
SYMBOL PARAMETER
V
V
I
I
I
R
j
SYMBOL PARAMETER
g
C
C
C
t
t
t
t
j
SYMBOL PARAMETER
I
I
V
t
Q
SYMBOL PARAMETER
W
DSS
DSS
GSS
d on
r
d off
f
DR
DRM
rr
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
fs
(BR)DSS
GS(TO)
SD
DS(ON)
iss
oss
rss
rr
DSS
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
Forward transconductance
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
V
V
V
V
V
V
CONDITIONS
V
V
V
V
R
CONDITIONS
-
-
I
I
V
CONDITIONS
I
V
T
F
F
D
amb
GS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
GS
gen
= 1.8 A; V
= 1.8 A; -dI
= 1.8 A; V
= 0 V; I
= V
= 100 V; V
= 100 V; V
= 30 V; V
= 10 V; I
= 25 V; I
= 0 V; V
= 30 V; I
= 10 V; R
= -10 V; V
= 10 V; R
= 50
= 25 ˚C
GS
; I
2
D
D
DS
GS
DD
D
D
D
= 0.25 mA
= 1 mA
F
GS
GS
/dt = 100 A/ s;
= 1.8 A
= 1.8 A
= 3 A;
R
GS
GS
DS
= 25 V; f = 1 MHz
= 0 V
= 30 V
= 50 ;
= 50 ;
25 V;
= 0 V;
= 0 V; T
= 0 V
j
= 125 ˚C
MIN.
MIN.
MIN.
MIN.
100
2.1
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
TYP.
0.21
0.85
0.30
300
3.0
0.1
2.5
10
90
35
25
30
20
80
1
9
Product Specification
BUK482-100A
-
-
-
-
MAX.
MAX.
MAX.
MAX.
0.28
100
500
120
4.0
1.0
1.8
7.2
1.1
10
50
14
40
45
40
40
-
-
-
-
Rev 1.100
UNIT
UNIT
UNIT
UNIT
mA
mJ
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
V
C
A