buk482-100a NXP Semiconductors, buk482-100a Datasheet - Page 3

• Manufacturer Part Number: buk482-100a
• Description: Powermos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
January 1998
PowerMOS transistor
ID% = 100 I
1E+02
1E+01
1E+00
1E-01
1E-02
Fig.2. Normalised continuous drain current.
120
110
100
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
Fig.1. Normalised power dissipation.
1E-07
Fig.3. Transient thermal impedance.
0
0
PD%
ID%
Zth j-amb / (K/W)
0.05
0.02
D =
0.5
0.2
0.1
Z
PD% = 100 P
0
th j-amb
D
20
20
/I
1E-05
D 25 ˚C
= f(t); parameter D = t
40
40
= f(T
1E-03
60
60
amb
D
Tamb / C
Tamb / C
/P
t / s
); conditions: V
D 25 ˚C
Normalised Current Derating
80
80
Normalised Power Derating
1E-01
P
= f(T
D
100
100
t
1E+01
p
amb
BUKX82-100
T
120
120
p
/T
)
D =
GS
140
140
T
t
1E+03
p
t
10 V
3
Fig.5. Typical output characteristics, T
Fig.6. Typical on-state resistance, T
I
D
Fig.4. Safe operating area. T
& I
0.01
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
7
6
5
4
3
2
1
0
0.1
10
DM
1
0
1
0
ID / A
6.5
0.1
10
20
0
RDS(ON)/ Ohm
ID / A
= f(V
R
4
I
DS(ON)
D
= f(V
DS
2
); I
4.5
= f(I
6
1
2
DS
DM
); parameter V
4
D
single pulse; parameter t
); parameter V
VDS / V
DC
VDS / V
ID / A
5
10
6
4
Product Specification
BUK482-100A
BUK482-100A
VGS/V = 5.5
amb
BUK482-100A
BUK482-100A
100
5.5
8
GS
tp = 10 us
100 us
1 ms
10 ms
100 ms
1 s
10 s
VGS/V =
GS
= 25 ˚C.
6
j
j
= 25 ˚C .
4.5
= 25 ˚C .
5
4
10
10
20
6
Rev 1.100
p