buk482-100a NXP Semiconductors, buk482-100a Datasheet - Page 4

• Manufacturer Part Number: buk482-100a
• Description: Powermos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
January 1998
PowerMOS transistor
Fig.9. Normalised drain-source on-state resistance.
a = R
I
D
Fig.8. Typical transconductance, T
2.0
1.5
1.0
0.5
= f(V
0
Fig.7. Typical transfer characteristics.
DS(ON)
-60 -40 -20
7
6
5
4
3
2
1
0
5
4
3
2
1
0
a
0
0
GS
gfs/ S
ID/ A
g
) ; conditions: V
fs
/R
= f(I
DS(ON)25 ˚C
Tj/ C = 150
D
2
); conditions: V
0
2
20
= f(T
ID/ A
Tj / C
40
4
VGS/ V
DS
j
); I
Normalised RDS(ON) = f(Tj)
25
4
= 25 V; parameter T
60
D
= 1.8 A; V
DS
80 100 120 140
BUK482-100A
BUK482-100A
6
= 25 V
6
j
= 25 ˚C .
GS
8
= 10 V
j
4
V
Fig.12. Typical capacitances, C
10000
I
C = f(V
GS(TO)
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
1000
4
3
2
1
0
D
100
-60
10
= f(V
VGS(TO) / V
Fig.11. Sub-threshold drain current.
0
C / pF
0
Fig.10. Gate threshold voltage.
ID / A
= f(T
-40
GS)
DS
); conditions: V
-20
; conditions: T
j
); conditions: I
1
0
20
2 %
max.
typ.
min.
20
Tj / C
40
SUB-THRESHOLD CONDUCTION
VDS / V
VGS / V
2
j
GS
60
D
= 25 ˚C; V
= 1 mA; V
= 0 V; f = 1 MHz
typ
Product Specification
BUK482-100A
80
3
100 120 140
iss
, C
98 %
DS
40
DS
oss
= V
4
Ciss
Coss
Crss
, C
= V
Rev 1.100
GS
rss
GS
.