A43E06321G-75F AMICC [AMIC Technology], A43E06321G-75F Datasheet - Page 26

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A43E06321G-75F

Manufacturer Part Number
A43E06321G-75F
Description
512K X 32 Bit X 2 Banks Low Power Synchronous DRAM
Manufacturer
AMICC [AMIC Technology]
Datasheet
PRELIMINARY
Page Read & Write Cycle at Same Bank @Burst Length=4
CLOCK
A10/AP
ADDR
(CL=2)
(CL=3)
CKE
RAS
CAS
DQM
CS
DQ
DQ
WE
BA
*Note : 1. To write data before burst read ends, DQM should be asserted three cycle prior to write command to avoid bus
0
Row Active
(A-Bank)
Ra
Ra
2. Row precharge will interrupt writing. Last data input, t
3. DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input
1
data after Row precharge cycle will be masked internally.
contention.
(July, 2005, Version 0.0)
2
t
RCD
3
(A-Bank)
Ca0
Read
4
5
(A-Bank)
Read
Qa0
Cb0
6
Qa1
Qa0
7
Qb0
Qa1
*Note 2
8
*Note1
Qb0
Qb1
25
9
High
RDL
10
before Row precharge, will be written.
(A-Bank)
Write
Dc0
Dc0
Cc0
11
Dc1
Dc1
12
t
CDL
(A-Bank)
Dd0
Dd0
Write
Cd0
13
Dd1
Dd1
AMIC Technology, Corp.
14
*Note3
t
*Note 2
RDL
15
Precharge
(A-Bank)
16
A43E06321
17
: Don't care
18
19

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