A43E06321G-75F AMICC [AMIC Technology], A43E06321G-75F Datasheet - Page 13

• Manufacturer Part Number: A43E06321G-75F
• Description: 512K X 32 Bit X 2 Banks Low Power Synchronous DRAM
• Manufacturer: AMICC [AMIC Technology]

Auto Temperature Compensated Self Refresh
Every cell in the DRAM requires refreshing due to the
capacitor losing its charge over time. The refresh rate is
dependent on temperature. At higher temperatures a
capacitor loses charge quicker than at lower temperature,
requiring the cells to be refreshed more often. In order to
save power consumption, according to the temperature,
Mobile-SDRAM includes the internal temperature sensor and
control units to control the self refresh cycle automatically.
Partial Array Self Refresh
The Partial Array Self Refresh (PASR) feature allows the
controller to select the amount of memory that will be
refreshed during SELF REFRESH. The refresh options are
all banks (banks 0, 1); one bank (bank 0 or 1 by A7). WRITE
and READ commands occur to any bank selected during
standard operation, but only the selected banks in PASR will
be refreshed during SELF REFRESH. The data in banks 1
will be lost when the one bank option with A7=0 is used.
Similarly the data will be lost in bank 0 when the one bank
option with A7=1 is used down.
Driver Strength Control
The driver strength feature allows one to reduce the drive
strength of the I/O’s on the device during low frequency
operation. This allows systems to reduce the noise
associated with the I/O’s switching.
Bank Activate
The bank activate command is used to select a random row
in an idle bank. By asserting low on RAS and
desired row and bank addresses, a row access is initiated.
The read or write operation can occur after a time delay of
t
internal timing parameter of SDRAM, therefore it is
dependent on operating clock frequency. The minimum
number of clock cycles required between bank activate and
read or write command should be calculated by dividing
t
the result to the next higher integer. The SDRAM has 2
internal banks on the same chip and shares part of the
internal circuitry to reduce chip area, therefore it restricts the
activation of both banks simultaneously. Also the noise
generated during sensing of each bank of SDRAM is high
requiring some time for power supplies to recover before the
other bank can be sensed reliably. t
minimum time required between activating different banks.
The number of clock cycles required between different bank
activation must be calculated similar to t
The minimum time required for the bank to be active to
initiate sensing and restoring the complete row of dynamic
cells is determined by t
precharge command to that active bank can be asserted.
The maximum time any bank can be in the active state is
determined by t
t
specification.
Burst Read
The burst read command is used to access burst of data on
consecutive clock cycles from an active row in an active
bank. The burst read command is issued by asserting low on
PRELIMINARY
RCD
RCD
RAS
(min) and t
(min) from the time of bank activation. t
(min) with cycle time of the clock and then rounding off
RAS
RAS
(July, 2005, Version 0.0)
(max) can be calculated similar to t
(max). The number of cycles for both
RAS
(min) specification before a
RRD
(min) specifies the
RCD
RCD
specification.
(min) is an
CS
with
RCD
12
the clock. The bank must be active for at least t
before the burst read command is issued. The first output
appears CAS latency number of clock cycles after the issue
of burst read command. The burst length, burst sequence
and latency from the burst read command is determined by
the mode register which is already programmed. The burst
read can be initiated on any column address of the active
row. The address wraps around if the initial address does not
start from a boundary such that number of outputs from each
I/O are equal to the burst length programmed in the mode
register. The output goes into high-impedance at the end of
the burst, unless a new burst read was initiated to keep the
data output gapless. The burst read can be terminated by
issuing another burst read or burst write in the same bank or
the other active bank or a precharge command to the same
bank. The burst stop command is valid at every page burst
length.
Burst Write
The burst write command is similar to burst read command,
and is used to write data into the SDRAM consecutive clock
cycles in adjacent addresses depending on burst length and
burst sequence. By asserting low on
with valid column address, a write burst is initiated. The data
inputs are provided for the initial address in the same clock
cycle as the burst write command. The input buffer is
deselected at the end of the burst length, even though the
internal writing may not have been completed yet. The burst
write can be terminated by issuing a burst read and DQM for
blocking data inputs or burst write in the same or the other
active bank. The burst stop command is valid only at full
page burst length where the writing continues at the end of
burst and the burst is wrap around. The write burst can also
be terminated by using DQM for blocking data and
precharging the bank “t
written into the active row. See DQM OPERATION also.
DQM Operation
The DQM is used to mask input and output operation. It
works similar to
writing during write operation. The read latency is two cycles
from DQM and zero cycle for write, which means DQM
masking occurs two cycles later in the read cycle and occurs
in the same cycle during write cycle. DQM operation is
synchronous with the clock, therefore the masking occurs for
a complete cycle. The DQM signal is important during burst
interrupts of write with read or precharge in the SDRAM. Due
to asynchronous nature of the internal write, the DQM
operation is critical to avoid unwanted or incomplete writes
when the complete burst write is not required.
Precharge
The precharge operation is performed on an active bank by
asserting low on
of the bank to be precharged. The precharge command can
be asserted anytime after t
activate command in the desired bank. “t
minimum time required to precharge a bank.
The minimum number of clock cycles required to complete
row precharge is calculated by dividing “t
time and rounding up to the next higher integer. Care should
CS
and
CAS
with
CS
OE
WE
,
RAS
during read operation and inhibits
AMIC Technology, Corp.
RDL
being high on the positive edge of
RAS
” after the last data input to be
,
WE
(min) is satisfied from the bank
and A10/AP with valid BA
CS
A43E06321
RP
RP
” is defined as the
” with clock cycle
,
CAS
and
RCD
(min)
WE