M25PX64-SOVME6F NUMONYX [Numonyx B.V], M25PX64-SOVME6F Datasheet - Page 59

• Manufacturer Part Number: M25PX64-SOVME6F
• Description: 64-Mbit, dual I/O, 4-Kbyte subsector erase, serial flash memory with 75 MHz SPI bus interface
• Manufacturer: NUMONYX [Numonyx B.V]

M25PX64
Table 17.
1. Preliminary data.
2. Typical values given for T
3. t
4. Value guaranteed by characterization, not 100% tested in production.
5. Expressed as a slew-rate.
6. Only applicable as a constraint for a WRSR instruction when SRWD is set to ‘1’.
7. V
8. When using the page program (PP) instruction to program consecutive bytes, optimized timings are
9. int(A) corresponds to the upper integer part of A. For example int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
Figure 30. Serial input timing
Symbol
t
t
PP
(success or failure) is known.
obtained with one sequence including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤
256).
SSE
t
t
CH
t
SE
BE
S
C
DQ0
DQ1
W
PPH
(8)
+ t
should be kept at a valid level until the program or erase operation has completed and its result
CL
tCHSL
must be greater than or equal to 1/ f
Alt.
AC characteristics
tDVCH
Write status register cycle time
Page program cycle time (256 bytes)
Page program cycle time (n bytes)
Program OTP cycle time (64 bytes)
Subsector erase cycle time
Sector erase cycle time
Bulk erase cycle time
Bulk erase cycle time (V
Test conditions specified in
High Impedance
A
= 25° C.
MSB IN
tSLCH
Parameter
(1)
tCHDX
(continued)
PP
C
.
= V
PPH
)
Table 13
tCLCH
tCHSH
Min
and
LSB IN
int(n/8) × 0.025
Table 14
Typ
DC and AC parameters
1.3
0.8
0.2
0.7
70
68
35
(2)
tCHCL
tSHSL
tSHCH
(9)
Max
150
160
15
5
3
AI13728
Unit
59/66
ms
ms
ms
ms
s
s