m393b5173dz1 Samsung Semiconductor, Inc., m393b5173dz1 Datasheet - Page 36
![no-image](/images/no-image-200.jpg)
m393b5173dz1
Manufacturer Part Number
m393b5173dz1
Description
Ddr3 Sdram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.M393B5173DZ1.pdf
(64 pages)
- Current page: 36 of 64
- Download datasheet (2Mb)
17.0 Electrical Characteristics and AC timing
17.1 Refresh Parameters by Device Density
Note :
1. Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine if DDR3 SDRAM devices support the following options or
17.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Registered DIMM
All Bank Refresh to active/refresh cmd time
Average periodic refresh interval
requirements referred to in this material.
(0 °C<T
Bin (CL - tRCD - tRP)
CASE
Parameter
Speed
tRCD
tRRD
tRAS
tFAW
tRC
Parameter
tRP
CL
≤95 °C, V
DDQ
= 1.5V ± 0.075V; V
DDR3-800
tREFI
6-6-6
37.5
52.5
min
15
15
10
40
6
DD
85 °C < T
0 °C ≤ T
= 1.5V ± 0.075V)
Symbol
tRFC
CASE
CASE
36 of 64
DDR3-1066
≤ 85°C
≤ 95°C
13.13
13.13
50.63
7-7-7
37.5
37.5
min
7.5
7
1Gb
110
7.8
3.9
DDR3-1333
2Gb
160
7.8
3.9
9-9-9
13.5
13.5
49.5
min
6.0
36
30
9
4Gb
300
7.8
3.9
Rev. 1.1 August 2008
DDR3 SDRAM
Units
tCK
8Gb
ns
ns
ns
ns
ns
ns
350
7.8
3.9
Units
ns
µs
µs
Note
Note
1
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