mt18vddt12872phg-335 Micron Semiconductor Products, mt18vddt12872phg-335 Datasheet - Page 15

• Manufacturer Part Number: mt18vddt12872phg-335
• Description: 1gb X72, Ecc, Pll 200-pin Ddr Sdram Sodimm
• Manufacturer: Micron Semiconductor Products

Table 14: Electrical Characteristics and Recommended AC Operating Conditions
DDR SDRAM components only; notes appear on pages 16–19
pdf: 09005aef81697898/source: 09005aef8169786e
DD18C128x72PHG.fm - Rev. A 10/04 EN
PARAMETER
DQ-DQS hold, DQS to first DQ to go non-
valid, per access
Data Hold Skew Factor
ACTIVE to PRECHARGE command
ACTIVE to READ with Auto precharge
command
ACTIVE to ACTIVE/AUTO REFRESH command
period
AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window (DVW)
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
(Continued)
AC CHARACTERISTICS
DD
SYMBOL
t
t
t
WPRES
t
t
t
t
t
WPRE
t
t
WPST
t
t
t
t
t
t
XSNR
XSRD
t
RPRE
RPST
t
REFC
t
WTR
QHS
RCD
RRD
REFI
VTD
RAS
RAP
t
RFC
t
WR
QH
na
RC
RP
t
t
MIN
0.25
QHS
200
HP -
t
0.9
0.4
0.4
42
15
60
72
15
15
12
15
75
QH -
0
1
0
15
-335
t
DQSQ
70,000
MAX
0.50
70.3
1.1
0.6
0.6
7.8
200-PIN DDR SDRAM SODIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
t
MIN
0.25
QHS
200
HP -
t
0.9
0.4
0.4
40
15
60
75
15
15
15
15
75
QH -
0
1
0
-262
t
DQSQ
120,00
MAX
0.75
70.3
1.1
0.6
0.6
7.8
0
1GB (x72, ECC, PLL)
t
t
MIN
0.25
t
QHS
HP -
200
0.9
0.4
0.4
QH -
20
65
78
20
20
15
15
75
40
-26A/-265
0
1
0
©2004 Micron Technology, Inc. All rights reserved.
t
DQSQ
120,000
MAX
0.75
70.3
1.1
0.6
0.6
7.8
UNITS NOTES
t
t
t
t
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
CK
CK
CK
CK
CK
CK
22, 23
18, 19
30
42
36
17
22
21
21