mt18htf25672fy-667 Micron Semiconductor Products, mt18htf25672fy-667 Datasheet - Page 8

• Manufacturer Part Number: mt18htf25672fy-667
• Description: 1gb, 2gb X72, Sr 240-pin Ddr2 Sdram Fbdimm
• Manufacturer: Micron Semiconductor Products

Electrical Specifications
Table 7:
Table 8:
Table 9:
pdf: 09005aef81a2f214/source: 09005aef81a2f22d
HTF18C64_128_256x72F.fm - Rev. B 9/07 EN
Parameter
Parameter
Voltage on any pin relative to V
Voltage on V
Voltage on V
Voltage on V
DDR2 SDRAM device operating case temperature
AMB device operating case temperature
AMB supply voltage
DDR2 SDRAM supply voltage
Termination voltage
EEPROM supply voltage
SPD input high (logic 1) voltage
SPD input low (logic 0) voltage
RESET input high (logic 1) voltage
RESET input low (logic 0) voltage
Leakage current (RESET)
Leakage current (link)
FBDIMM Link
Data Rate
3.2 Gb/s
4.0 Gb/s
4.8 Gb/s
CC
DD
TT
Absolute Maximum Ratings
Input DC Voltage and Operating Conditions
Clock Rates
pin relative to V
pin relative to V
pin relative to V
Notes:
Notes:
Stresses greater than those listed in Table 7 may cause permanent damage to the
module. This is a stress rating only, and functional operation of the module at these or
any other conditions outside those indicated in the device data sheet is not implied.
Exposure to absolute maximum rating conditions for extended periods may adversely
affect reliability.
1. V
2. T
3. See applicable DDR2 SDRAM component data sheet for
1. Applies to AMB and SPD.
2. Applies to SMB and SPD bus signals.
3. Applies to AMB CMOS signal RESET#.
4. For all other AMB-related DC parameters, please refer to the high-speed differential link
t
settings. The
sustain <85°C operation.
interface specification.
SS
REFI = 3.9µs above 85°C); refer to the DDR2 SDRAM component data sheet.
SS
SS
SS
C
IN
is specified at 95°C only when using 2X refresh timing (
should not be greater than V
Reference Clock
133 MHz
167 MHz
200 MHz
t
REFI parameter is used to specify the doubled refresh interval necessary to
Symbol
1GB, 2GB (x72, SR) 240-Pin DDR2 SDRAM FBDIMM
V
V
V
V
V
DDSPD
V
IH
IH
IL
IL
V
V
I
I
DD
(
(
CC
TT
(
(
L
L
DC
DC
DC
DC
V
Symbol
)
)
)
)
IN
8
V
V
,
V
T
DD
CC
V
TT
C
CC
OUT
0.48 × V
.
Min
1.46
–5.0
–90
1.7
3.0
2.1
1.0
DRAM Clock
–
–
Micron Technology, Inc., reserves the right to change products or specifications without notice.
266 MHz
333 MHz
400 MHz
DD
Min
–0.3
–0.3
–0.5
–0.5
0
0
0.5 × V
Nom
1.5
1.8
3.3
–
–
–
–
–
–
DD
t
+1.75
+1.75
REFI and extended mode register
+110
Max
+2.3
+2.3
+95
t
Electrical Specifications
REFI = 7.8µs at or below 85°C;
0.52 × V
V
Max
+5.0
1.54
DDSPD
+90
1.9
3.6
0.8
0.5
©2005 Micron Technology, Inc. All rights reserved.
–
DD
Units
Data Rate
°C
°C
533 Mb/s
666 Mb/s
800 Mb/s
V
V
V
V
DRAM
Units
µA
µA
V
V
V
V
V
V
V
V
Notes
Notes
2, 3
1
1
2
2
3
2
3
4