mt18htf25672fy-667 Micron Semiconductor Products, mt18htf25672fy-667 Datasheet - Page 10

• Manufacturer Part Number: mt18htf25672fy-667
• Description: 1gb, 2gb X72, Sr 240-pin Ddr2 Sdram Fbdimm
• Manufacturer: Micron Semiconductor Products

Table 14:
Table 15:
Table 16:
pdf: 09005aef81a2f214/source: 09005aef81a2f22d
HTF18C64_128_256x72F.fm - Rev. B 9/07 EN
I
I
Total power
I
I
Total power
I
I
Total power
CC
DD
CC
DD
CC
DD
Symbol
Symbol
Symbol
I
I
I
DD
DD
DD
Specifications – 2GB DDR2-533
Specifications – 2GB DDR2-667
Specifications – 2GB DDR2-800
I
I
I
Notes:
DD
DD
DD
2,200
1,620
2,600
1,620
_Idle_0
_Idle_0
_Idle_0
TBD
TBD
TBD
6.5
7.1
1. Total power is based on maximum voltage levels, I
I
I
I
DD
DD
DD
3,000
1,620
3,400
1,620
_Idle_1 I
_Idle_1 I
_Idle_1 I
TBD
TBD
TBD
7.8
8.4
DD
DD
DD
_Active_1 I
_Active_1 I
_Active_1 I
3,400
3,095
3,900
3,275
11.2
12.3
TBD
TBD
TBD
1GB, 2GB (x72, SR) 240-Pin DDR2 SDRAM FBDIMM
10
DD
DD
DD
_Active_2 I
_Active_2 I
_Active_2 I
3,200
1,620
3,700
1,620
TBD
TBD
TBD
8.1
8.9
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I
DD
DD
DD
DD
_Training
_Training
_Training
Conditions and Specifications
3,500
1,620
4,000
1,620
CC
TBD
TBD
TBD
8.6
9.3
@ 1.575V and I
I
I
I
DD
DD
DD
©2005 Micron Technology, Inc. All rights reserved.
3,800
1,620
4,500
1,620
10.2
TBD
TBD
TBD
_IBIST
9.0
_IBIST
_IBIST
DD
@ 1.9V.
I
I
I
2,000
DD
2,500
DD
DD
326
TBD
TBD
TBD
3.8
326
4.6
_EI
_EI
_EI
Units
Units
Units
mA
mA
mA
mA
mA
mA
W
W
W