mt18htf25672fy-667 Micron Semiconductor Products, mt18htf25672fy-667 Datasheet - Page 13

• Manufacturer Part Number: mt18htf25672fy-667
• Description: 1gb, 2gb X72, Sr 240-pin Ddr2 Sdram Fbdimm
• Manufacturer: Micron Semiconductor Products

Table 19:
pdf: 09005aef81a2f214/source: 09005aef81a2f22d
HTF18C64_128_256x72F.fm - Rev. B 9/07 EN
117–118 Module ID: Module manufacturer’s JEDEC ID code
120–121 Module ID: Module manufacturing date
122–125 Module ID: Module serial number
128–145 Module part number
146–147 Module revision code
148–149 DRAM manufacturer’s JEDEC ID code
152–175 Reserved for manufacturer-specific data
176–255 Reserved for customer-specific data
42–78
Byte
119
33
34
35
36
37
38
39
40
41
79
80
Description
Bits 7:4: ΔT
MAX case temperature and baseline MAX case temperature), the
baseline MAX case temperature is 85°C; Bits 3:0: DT4R4W Δ (case
temperature rise difference between I
READ and I
Thermal resistance of DRAM device package from top (case) to
ambient (PSI T-A DRAM) at still air condition, based on JESD51-2
standard
DT0/T
due to I
temperature; Bit 1: Double refresh mode bit; Bit 0: High
temperature self refresh rate support indication
DT2N/DT2Q: Case temperature rise from ambient due to
I
I
DT2P: Case temperature rise from ambient due to I
PRECHARGE POWER-DOWN operation
DT3N: Case temperature rise from ambient due to I
STANDBY operation
DT4R/mode bit: Bits 7:1: Case temperature rise from ambient due
to I
specify if DT4W is greater than or less than DT4R
DT5B: Case temperature rise from ambient due to I
REFRESH operation
DT7: Case temperature rise from ambient due to I
interleave READ MODE operation
FBDIMM reserved bytes
FBDIMM ODT definition
Reserved
Module ID: Module manufacturing location
DD
DD
2N precharge STANDBY operation for UDIMM and due to
2Q/precharge quiet STANDBY operation for RDIMM
DD
Serial Presence-Detect Matrix – SDRAM Device and Module (continued)
C
4R/page open BURST READ operation; Bit 0: Mode bit to
mode bits: Bits 7:2: Case temperature rise from ambient
DD
0/ACTIVATE PRECHARGE operation minus 2.8°C offset
C
DD
(MAX) (DRAM case temperature difference between
4W/page open burst WRITE operations)
DD
4R/page open burst
1GB, 2GB (x72, SR) 240-Pin DDR2 SDRAM FBDIMM
DD
13
DD
DD
DD
7/bank
2P/
5B/BURST
3N/ACTIVE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MICRON
MICRON
Entry
1–12
75Ω
–
–
–
–
–
–
–
–
–
–
0
–
–
–
–
–
–
Serial Presence-Detect
©2005 Micron Technology, Inc. All rights reserved.
Variable
Variable
Variable
Variable
01–0C
802C
802C
1GB
data
data
data
data
0A
0D
52
32
04
0E
18
0F
12
00
01
00
FF
FF
Variable
Variable
Variable
Variable
01–0C
802C
802C
2GB
data
data
data
data
0A
0B
51
31
04
0F
18
12
15
00
01
00
FF
FF