mt18htf25672pdz Micron Semiconductor Products, mt18htf25672pdz Datasheet - Page 8

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mt18htf25672pdz

Manufacturer Part Number
mt18htf25672pdz
Description
2gb X72, Ecc, Dr 240-pin Ddr2 Sdram Rdimm
Manufacturer
Micron Semiconductor Products
Datasheet
Electrical Specifications
Table 6:
PDF: 09005aef83d3d893/Source: 09005aef83d3d8c1
htf18c256x72pdz.fm - Rev. A 11/09 EN
V
V
Symbol
DD
IN
I
VREF
, V
T
I
T
/V
OZ
I
C
I
A
1
DDQ
OUT
Absolute Maximum Ratings
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
input 0V ≤ V
0V)
Output leakage current; 0V ≤ V
ODT are disabled
V
Module ambient operating temperature
DDR2 SDRAM component case operating
temperature
DD
REF
supply voltage relative to V
leakage current; V
Notes: 1. The refresh rate is required to double when 85°C < T
IN
2
Stresses greater than those listed in Table 6 may cause permanent damage to the DRAM
devices on the module. This is a stress rating only, and functional operation of the mod-
ule at these or any other conditions above those indicated in each device’s data sheet is
not implied. Exposure to absolute maximum rating conditions for extended periods may
adversely affect reliability.
≤ 0.95V; (All other pins not under test =
2. For further information, refer to technical note
able on Micron’s Web site.
REF
= valid V
OUT
SS
SS
≤ V
REF
DDQ
level
IN
2GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
≤ V
; DQs and
DD
8
; V
REF
Command/address
RAS#, CAS#, WE#, S#,
CKE, ODT, BA
CK, CK#
DM
DQ, DQS, DQS#
Commercial
Industrial
Commercial
Industrial
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TN-00-08: “Thermal
C
≤ 95°C.
Electrical Specifications
©2009 Micron Technology, Inc. All rights reserved.
–250
Min
–0.5
–0.5
–10
–10
–36
–40
–40
–5
0
0
Applications,” avail-
Max
+250
+2.3
+2.3
+10
+10
+36
+70
+85
+85
+95
+5
Units
µA
µA
µA
°C
°C
V
V

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