lrs1331 Sharp Microelectronics of the Americas, lrs1331 Datasheet - Page 23

• Manufacturer Part Number: lrs1331
• Description: Stacked Chip Flash Memory Sram
• Manufacturer: Sharp Microelectronics of the Americas

Stacked Chip (16M Flash & 4M SRAM)
SRAM DATA RETENTION CHARACTERISTICS
NOTES:
1. Reference value at T
2. S-CE
Data Sheet
Data Retention Supply Voltage
Data Retention Supply Current
Chip Enable Setup Time
Chip Enable Hold Time
NOTE: To control the data retention mode at S-CE
T
A
S-V
S-V
S-CE
= -25°C to +85°C
S-CE
1
≥ V
PARAMETER
V
CC
CC
CCDR
2
1
CC
- 0.2 V, S-CE
and V
V
CCDR
V
2.7 V
0.6 V
A
CCDR
2.7 V
2.2 V
CCDR
0 V
= 25°C, S-V
0 V
- 0.2 V, or 0 V and 0.2 V, and during the data retention mode.
Figure 12. Data Retention Timing Diagram (S-CE
Figure 13. Data Retention Timing Diagram (S-CE
2
≥ V
CC
CC
- 0.2 V (S-CE
SYMBOL
V
= 3.0 V.
I
CCDR
t
CCDR
CDR
t
t
t
R
CDR
CDR
1
1
S-CE
S-CE
V
S-CE
controlled) or S-CE
, fix the input level of S-CE
CCDR
2
1
1
≤ 0.2 V or
≥ V
≥ V
= 1.2 V, S-CE
Data Retention Mode
S-CE
Data Retention Mode
CONDITIONS
CCDR
CCDR
S-CE
1
≥ V
2
- 0.2 V
- 0.2 V
2
≤ 0.2 V
CCDR
≤ 0.2 V (S-CE
2
- 0.2 V
≤ 0.2 V or
2
between
2
controlled).
1
2
MIN.
t
Controlled)
Controlled)
RC
1
0
t
R
t
R
TYP.
1
MAX.
3.6
5
UNIT
ms
µA
ns
V
LRS1331
NOTES
1331-12
1331-13
2
2
23