lrs1331 Sharp Microelectronics of the Americas, lrs1331 Datasheet - Page 13
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lrs1331
Manufacturer Part Number
lrs1331
Description
Stacked Chip Flash Memory Sram
Manufacturer
Sharp Microelectronics of the Americas
Datasheet
1.LRS1331.pdf
(26 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LRS1331
Manufacturer:
SHARP
Quantity:
20 000
Company:
Part Number:
lrs1331B
Manufacturer:
TI
Quantity:
2 879
Part Number:
lrs1331B
Manufacturer:
SHARP
Quantity:
20 000
Stacked Chip (16M Flash & 4M SRAM)
Write Cycle (F-CE Controlled)
NOTES:
1. In system where F-CE defines the pulse width (within a F-WE timing waveform), all setup,
2. Refer to the ‘Flash Memory Command Definition’ section for valid A
Block Erase and Word Write Performance
NOTES:
1. Reference values at T
2. Sampled, but not 100% tested.
3. Excludes system-level overhead.
Data Sheet
Write Cycle Time
F-RP HIGH Recovery to F-CE going to LOW
F-WE Setup to F-CE going LOW
F-CE Pulse Width
F-WP V
F-V
Address Setup to F-CE going HIGH
Data Setup to F-CE going HIGH
Data Hold from F-CE HIGH
Address Hold from F-CE HIGH
F-WE Hold from F-CE HIGH
F-CE Pulse Width HIGH
F-CE HIGH to F-RY/BY going LOW
Write Recovery before Read
F-V
F-WP V
T
hold, and inactive F-WE times should be measured relative to the F-CE waveform.
T
SYMBOL
A
CCW
CCW
A
t
t
t
t
t
t
t
t
t
t
t
t
WHQV1
WHQV2
WHQV3
WHQV4
WHRZ1
WHRZ2
EHQV1
EHQV2
EHQV3
EHQV4
EHRZ1
EHRZ2
= -25°C to +85°C, V
= -25°C to +85°C, V
IH
IH
Setup to F-CE going HIGH
Hold from Valid SRD, F-RY/BY HIGH Z
Setup to F-CE going HIGH
Hold from Valid SRD, F-RY/BY HIGH
PARAMETER
Word Write Time 32K-word Block
Word Write Time 4K-word Block
Block Write Time 32K-word Block
Block Write Time 4K-word Block
Block Erase Time 32K-word Block
Block Erase Time 4K-word Bock
Full Chip Erase Time
Set Lock-Bit Time
Clear Block Lock-Bits Time
Word Write Suspend Latency Time to Read
Erase Suspend Latency Time to Read
A
= +25°C and V
CC
CC
= 2.7 V to 3.6 V
= 2.7 V to 3.6 V
PARAMETER
CC
= 3.0 V, V
1
PP
SYMBOL
= 3.0 V.
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
EHWH
SHEH
DVEH
EHDX
AVAV
PHEL
WLEL
ELEH
VPEH
AVEH
EHAX
EHEL
EHRL
EHGL
QVVL
QVSL
IN
and D
MIN.
V
CCW
MIN.
100
100
90
60
50
50
20
1
0
0
0
0
0
0
0
IN
for block erase or word write.
= 2.7 V to 3.6 V
TYP.
0.15
27.6
0.64
16.0
1.1
1.2
0.6
6.0
33
36
42
1
MAX.
100
MAX.
200
200
210
200
2.4
0.3
15
30
6
5
5
2
UNIT
UNIT
µs
µs
µs
µs
µs
s
s
s
s
s
s
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
3
3
3
3
3
3
3
3
3
NOTES
2
2
LRS1331
13