am49lv128bm Meet Spansion Inc., am49lv128bm Datasheet - Page 97

• Manufacturer Part Number: am49lv128bm
• Description: Stacked Multi-chip Package Mcp ,128 Megabit 8 M ? 16-bit ,uniform Sector Flash Memory And 32 Mbit 2 M ? 16-bit Pseudo-static Ram With Page Mode Featuring Mirrorbit Technology,supplemental Datasheet
• Manufacturer: Meet Spansion Inc.

REVISION SUMMARY
Revision A (January 22, 2004)
Initial release.
Revision A+1 (January 29, 2004)
Connection Diagrams
Corrected signal designation on ball H8.
AC Characteristics (Flash)
Read-only Operations: Added Figure 14.
pSRAM AC Characteristics
Figure 32, Write Timing #1 (Basic Timing): Renamed
t
extended t
Figure 33, Write Timing #2 (WE# Control): The period
along WE# formerly labeled t
period has been added which extends from WE#
going high after the first t
ond t
Figure 34, Write Timing #3-1 (WE#/LB#/UB# Byte
Write Control): t
returns low.
Figure 35, Write Timing #3-2 (WE#/LB#/UB# Byte
Write Control): t
returns low.
Write Operations table: Changed minimum specifica-
tion for t
Revision A+2 (February 16, 2004)
PSRAM Features
Feature list was corrected to four main features
Lookahead Pinout Diagram
Figure was removed and replaced by TBD.
Ordering Information
Added and option that designates standard or second
supplier for PSRAM.
AM49LV128BM MCP with Second Supplier
Section added.
Revision A+3 (February 25, 2004)
Operating Ranges
Removed V
AM49LVxxxBM MCP with Second Supplier PSRAM
Block Diagram
Added a note clarifying ZZ#.
June 17, 2004
WRC
WP
to t
WR
period begins.
AH
BR
; extended t
from 12 to 7.5 ns. Added t
IO
to where LB#, UB# goes low.
from the list of supply voltages.
WR
WR
has been extended to where WE#
has been extended to where WE#
WR
WP
to where WE# returns low;
WR
period to where the sec-
is now t
AH
AH
specification.
. A new t
Am49LV128BM
WR
Revision A+4 (March 4, 2004)
Lookahead Diagram
Added the lookahead diagram.
Revision A+5 (March 15, 2004)
Global
Changed DQ designations to 0-7 and 8-15.
Global
Removed references to the 4M Partial power down
mode and added references to Deep Sleep.
Recommended Operating Conditions
Corrected Min. and Max values for V
PSRAM AC Characteristics
Write Operation
Changed column head to Value, added t
eter, changed min value of t
Notes 8, 9, and 10.
AC Characteristics
Added Power Down Parameters and Other Timing Pa-
rameters tables.
AM49LV128BM MCP with Second PSRAM Supplier
Removed Capacitance section.
Partial Array Refresh (PAR)
Removed reference to two versions.
Revision A6 (June 17, 2004)
“Absolute Maximum Ratings” on page 37
Changed “Voltage on VCC Supply relative to VSS -
Rating” To -0.2 to 3.6.
Changed “Power Dissipation - Rating” to 1.
Changed “Operating Temperature - Rating” to -25 to
+85.
“Low Power ICC Characteristics for PSRAM” on
page 93
Changed “PAR Mode Standby Current” - Type to “50”
and Max to “75”.
Changed “RMS Mode Standby Current - 8Mb Device”
- Type to “50” and Max to “75”.
Changed “RMS Mode Standby Current - 16Mb De-
vice” - Type to “70” and Max to “90”.
Changed “Deep Sleep Current” -Type to “7”.
“Address Patterns for RMS (A3 = 1, A4 = 1)” on
page 92
Deleted “Three-quarters of die from table.
BWO
to 30, and added
IH
parameter.
WHOL
param-
95