am49lv128bm Meet Spansion Inc., am49lv128bm Datasheet - Page 3

• Manufacturer Part Number: am49lv128bm
• Description: Stacked Multi-chip Package Mcp ,128 Megabit 8 M ? 16-bit ,uniform Sector Flash Memory And 32 Mbit 2 M ? 16-bit Pseudo-static Ram With Page Mode Featuring Mirrorbit Technology,supplemental Datasheet
• Manufacturer: Meet Spansion Inc.

Am49LV128BM
Stacked Multi-Chip Package (MCP)
128 Megabit (8 M x 16-Bit) MirrorBit™ Uniform Sector Flash Memory and
32 Mbit (2 M x 16-Bit) pseudo-static RAM with Page Mode
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
PERFORMANCE CHARACTERISTICS
Single power supply operation
— 3 volt read, erase, and program operations
Manufactured on 0.23 µm MirrorBit process
technology
SecSi™ (Secured Silicon) Sector region
— 128-word sector for permanent, secure identification
— May be programmed and locked by the customer
Flexible sector architecture
— Two hundred fifty-six 32 Kword sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for single-
Minimum 100,000 erase cycle guarantee per sector
20-year data retention at 125°C
High performance
— As fast as 105 ns access time
— 25 ns page read times
— 0.5 s typical sector erase time
— 15 µs typical write buffer word programming time: 16-
— 4-word page read buffer
— 16-word write buffer
Low power consumption (typical values at 3.0 V, 5
MHz)
— 30 mA typical active read current
through an 8-word random Electronic Serial Number,
accessible through a command sequence
power supply flash, and superior inadvertent write
protection
word write buffer reduces overall programming time
for multiple-word updates
SUPPLEMENT
SOFTWARE & HARDWARE FEATURES
PSRAM FEATURES
— 50 mA typical erase/program current
— 1 µA typical standby mode current
Package option
— 64-ball FBGA
Software features
— Program Suspend & Resume: read other sectors
— Erase Suspend & Resume: read/program other
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
— CFI (Common Flash Interface) compliant: allows host
Hardware features
— Sector Group Protection: hardware-level method of
— Temporary Sector Group Unprotect: V
— WP#/ACC input accelerates programming time
— Hardware reset input (RESET#) resets device
Asynchronous SRAM Interface
Fast Access Time
— t
Low Voltage Operating Condition
— V
Byte Control by LB# and UB#
before programming operation is completed
sectors before an erase operation is completed
multiple-word or byte programming time
system to identify and accommodate multiple flash
devices
preventing write operations within a sector group
of changing code in locked sector groups
(when high voltage is applied) for greater throughput
during system production. Protects last sector
regardless of sector protection settings
CE
DD
= t
= 2.7 to + 3.1 V
AA
Publication Number: 31022_00
= 65 ns max
Amendment:6
Rev: A
ID
-level method