fds6690a-nf073 Fairchild Semiconductor, fds6690a-nf073 Datasheet

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fds6690a-nf073

Manufacturer Part Number
fds6690a-nf073
Description
Fds6690a Single N-channel, Logic-level, Powertrench Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDS6690A-NF073.pdf (6 pages)
FDS6690A
Single N-Channel, Logic-Level, PowerTrench
General Description
This N-Channel Logic Level MOSFET is produced
using
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
©2007 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
E
T
Thermal Characteristics
R
R
R
Package Marking and Ordering Information
D
DSS
GSS
D
AS
J
θJA
θJA
θJC
, T
Device Marking
STG
FDS6690A
Fairchild
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Semiconductor’s
D
D
Pin 1
D
D
SO-8
D
D
– Continuous
– Pulsed
D
FDS6690A
D
Device
Parameter
S
S
S
S
S
S
advanced
G
G
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 3)
(Note 1a)
(Note 1b)
(Note 1)
Features
• 11 A, 30 V.
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely
• High power and current handling capability
low R
® ® ® ®
DS(ON)
MOSFET
5
6
7
8
Tape width
R
R
12mm
DS(ON)
DS(ON)
–55 to +150
Ratings
±20
125
2.5
1.0
30
11
50
96
50
25
= 12.5 mΩ @ V
= 17.0 mΩ @ V
February 2007
4
3
2
1
GS
GS
FDS6690A Rev E1 (W)
2500 units
Quantity
= 10 V
= 4.5 V
Units
°C/W
tm
mJ
°C
W
V
V
A

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fds6690a-nf073 Summary of contents

Page 1

... Reel Size 13’’ February 2007 12.5 mΩ DS(ON 17.0 mΩ 4.5 V DS(ON Ratings Units 30 V ± 2 –55 to +150 °C 50 °C/W 125 25 Tape width Quantity 12mm 2500 units FDS6690A Rev E1 (W) ...

Page 2

... V –5 mV/°C 9.8 12.5 mΩ 12.0 17.0 13.7 22 1205 pF 290 pF 115 pF Ω 2 3.4 nC 4.0 nC 2.1 A 0.74 1 125°C/W when mounted on a minimum pad. Scale letter size paper FDS6690A Rev E1 (W) ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3.5V 4.0V 4.5V 6.0V 10V DRAIN CURRENT ( 5. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.4 0.6 0.8 1 1.2 , BODY DIODE FORWARD VOLTAGE (V) SD FDS6690A Rev E1 (W) ...

Page 4

... Figure 10. Unclamped Inductive Switching 0 TIME (sec 1MHz iss oss DRAIN TO SOURCE VOLTAGE (V) DS Tj=25 ¢ Tj=125 ¢ 0 100 t , TIME IN AVALANCHE (mS) AV Capability Figure SINGLE PULSE R = 125° C/W θ 25° 100 FDS6690A Rev E1 (W) ...

Page 5

... Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. R θJA R P(pk Duty Cycle 0 TIME (sec) 1 ( θJA = 125 /W θJA £ (t) A θ 100 1000 FDS6690A Rev E1 (W) ...

Page 6

... This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ® UniFET™ VCX™ Wire™ ® ® Definition Rev. I22 FDS6690A Rev E1 (W) ...

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