bcx71k-d87z Fairchild Semiconductor, bcx71k-d87z Datasheet

bcx71k-d87z

Manufacturer Part Number

bcx71k-d87z

Description

Bcx71k Pnp General Purpose Amplifier

Manufacturer

Fairchild Semiconductor

Datasheet

1.BCX71K-D87Z.pdf (5 pages)

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1997 Fairchild Semiconductor Corporation

Symbol

CEO

CES

EBO

PNP General Purpose Amplifier

, T

Absolute Maximum Ratings*

This device is designed for applications requiring extremely

high current gain at collector currents to 300 mA. Sourced

from Process 68.

Thermal Characteristics

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

stg

Total Device Dissipation

Thermal Resistance, Junction to Ambient

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

Derate above 25 C

SOT-23

Mark: BK

BCX71K

Characteristic

Parameter

TA = 25°C unless otherwise noted

*BCX71K

Max

350

357

2.8

-55 to +150

Value

500

5.0

Units

mW/ C

C/W

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bcx71k-d87z Summary of contents

Page 1

... Derate above Thermal Resistance, Junction to Ambient JA * Device mounted on FR-4 PCB 1.5 mm. 1997 Fairchild Semiconductor Corporation 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Value Units 5.0 V 500 mA -55 to +150 C Max Units *BCX71K 350 mW 2.8 mW/ C 357 C/W 3 ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage (BR)CEO V Emitter-Base Breakdown Voltage (BR)EBO I Collector-Cutoff Current CES ON CHARACTERISTICS h DC Current Gain FE Collector-Emitter Saturation Voltage V sat CE( ) Base-Emitter Saturation Voltage V sat BE( ...

Page 3

Typical Characteristics Base-Emitter Saturation Voltage vs Collector Current 1 ° 0.8 ° 0.6 0.4 0 COLLECTOR CURRE NT (mA) C Collector-Cutoff Current vs Ambient Temperature 100 ...

Page 4

Typical Characteristics Gain Bandwidth Product vs Collector Current COLLECTOR CURRENT (mA) C PNP General Purpose Amplifier (continued) Power Dissipation vs Ambient Temperature 350 300 250 200 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...

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