mt28f640j3rp-115-met Micron Semiconductor Products, mt28f640j3rp-115-met Datasheet - Page 49

• Manufacturer Part Number: mt28f640j3rp-115-met
• Description: 128mb, 64mb, 32mb Q-flash Memory
• Manufacturer: Micron Semiconductor Products

Table 29: Block Erase, Program, and Lock Bit Configuration Performance
Notes: 1, 2, 3; extended temperature (-40ºC ≤ T
NOTE:
09005aef80b5a323
MT28F640J3.fm – Rev. N 3/05 EN
PARAMETER
Write Buffer Byte Program Time
(Time to Program 32 bytes/16 words)
Byte/Word Program Time (Using WORD/BYTE PROGRAM
Command)
Block Program Time (Using WRITE-to-BUFFER Command)
Block Erase Time
Set Lock Bits Time
Clear Block Lock Bits Time
Program Suspend Latency Time to Read
Erase Suspend Latency Time to Read
1. Typical values measured at T
2. These performance numbers are valid for all speed versions.
3. Sampled, but not 100 percent tested.
4. Excludes system-level overhead.
5. These values are valid when the buffer is full, and the start address is aligned on a 32-byte boundary.
6. Effective per-byte program time is 5.6µs/byte (typical).
7. Effective per-word program time is 11.2µs/word (typical).
8. MAX values are measured at worst-case temperature and V
change based on device characterization.
A
= +25ºC and nominal voltages. Assumes corresponding lock bits are not set. Subject to
A
≤ +85ºC)
t
t
t
t
t
t
WED1
WED2
WED3
WED4
WED5
WED6
SYM
49
t
t
LPS
LES
CC
corner after 100,000 cycles.
12.5
0.75
TYP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
200
0.8
0.5
14
25
26
32Mb
64Mb
MAX
654
630
1.7
0.7
75
30
35
5
8
128Mb, 64Mb, 32Mb
11.2
0.75
TYP
Q-FLASH MEMORY
180
0.7
0.5
10
25
25
128Mb
MAX
654
630
1.7
0.7
75
30
35
5
8
UNITS
©2000 Micron Technology. Inc.
sec
sec
sec
µs
µs
µs
µs
µs
NOTES
4, 5,
6, 7
4
4
4
4
5