mt28f640j3rp-115-met Micron Semiconductor Products, mt28f640j3rp-115-met Datasheet - Page 14

• Manufacturer Part Number: mt28f640j3rp-115-met
• Description: 128mb, 64mb, 32mb Q-flash Memory
• Manufacturer: Micron Semiconductor Products

Command Definitions
operations from the status register, query, identifier
codes, or blocks are enabled. Placing Vpenh on Vpen
enables BLOCK ERASE, PROGRAM, and LOCK BIT
Table 4:
Note 1; notes appear on following page
09005aef80b5a323
MT28F640J3.fm – Rev. N 3/05 EN
COMMAND
READ ARRAY
READ IDENTIFIER
CODES
READ QUERY
READ STATUS
REGISTER
CLEAR STATUS
REGISTER
WRITE TO BUFFER
WORD/BYTE
PROGRAM
BLOCK ERASE
BLOCK ERASE/
PROGRAM SUSPEND
BLOCK ERASE/
PROGRAM RESUME
CONFIGURATION
SET BLOCK LOCK BITS
CLEAR BLOCK LOCK
BITS
PROTECTION
PROGRAM
When the Vpen voltage is < Vpenlk, only READ
Micron Q-Flash Memory Command Set Definitions
COMMAND
SCALABLE
OR BASIC
SCS/BCS
SCS/BCS
SCS/BCS
SCS/BCS
SCS/BCS
SCS/BCS
SCS/BCS
SCS/BCS
SCS/BCS
SET
SCS
SCS
SCS
SCS
2
CYCLES
REQ’D
BUS
> 2
≥2
≥2
1
2
1
2
2
1
1
2
2
2
2
OPER
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
FIRST BUS CYCLE
3
14
ADDR
BA
BA
X
X
X
X
X
X
X
X
X
X
X
X
CONFIGURATION operations. Device operations are
selected by writing specific commands into the CEL, as
seen in Table 4.
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DATA
40h or
B0h
D0h
B8h
C0h
90h
98h
70h
50h
E8h
10h
20h
60h
60h
FFh
6
5,
OPER
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
READ
READ
READ
128Mb, 64Mb, 32Mb
SECOND BUS CYCLE
3
Q-FLASH MEMORY
ADDR
QA
BA
PA
BA
BA
PA
IA
X
X
X
4
DATA
SRD
D0h
D0h
01h
QD
PD
CC
PD
ID
N
6
©2000 Micron Technology. Inc.
5,
9, 10, 11
NOTES
12, 13
11, 12
14
12
7
8